The first measurement of low-frequency noise performance for self-aligned InAIAs/InGaAs HBTs is reported. The l/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.
- Bipolar devices
ASJC Scopus subject areas
- Electrical and Electronic Engineering