Low-Frequency Noise Performance of Self-Aligned Inaias/InGaAs Heterojunction Bipolar Transistors

S. Tanaka, H. Hayama, K. Honjo, A. Furukawa, T. Baba, M. Mizuta

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Abstract

The first measurement of low-frequency noise performance for self-aligned InAIAs/InGaAs HBTs is reported. The l/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.

Original languageEnglish
Pages (from-to)1439-1441
Number of pages3
JournalElectronics Letters
Volume26
Issue number18
DOIs
Publication statusPublished - 1990 Jan

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Keywords

  • Bipolar devices
  • Noise

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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