Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors

Shinichi Tanaka, H. Hayama, K. Honjo, A. Furukawa, T. Baba, M. Mizuta

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The first measurement of low-frequency noise performance for self-aligned InAlAs/InGaAs HBTs is reported. The 1/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.

Original languageEnglish
Pages (from-to)1439-1441
Number of pages3
JournalElectronics Letters
Volume26
Issue number18
Publication statusPublished - 1990 Jan 1
Externally publishedYes

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Heterojunction bipolar transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tanaka, S., Hayama, H., Honjo, K., Furukawa, A., Baba, T., & Mizuta, M. (1990). Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors. Electronics Letters, 26(18), 1439-1441.

Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors. / Tanaka, Shinichi; Hayama, H.; Honjo, K.; Furukawa, A.; Baba, T.; Mizuta, M.

In: Electronics Letters, Vol. 26, No. 18, 01.01.1990, p. 1439-1441.

Research output: Contribution to journalArticle

Tanaka, S, Hayama, H, Honjo, K, Furukawa, A, Baba, T & Mizuta, M 1990, 'Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors', Electronics Letters, vol. 26, no. 18, pp. 1439-1441.
Tanaka S, Hayama H, Honjo K, Furukawa A, Baba T, Mizuta M. Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors. Electronics Letters. 1990 Jan 1;26(18):1439-1441.
Tanaka, Shinichi ; Hayama, H. ; Honjo, K. ; Furukawa, A. ; Baba, T. ; Mizuta, M. / Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors. In: Electronics Letters. 1990 ; Vol. 26, No. 18. pp. 1439-1441.
@article{99fdf7e56f6443579b5540d38e40c00d,
title = "Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors",
abstract = "The first measurement of low-frequency noise performance for self-aligned InAlAs/InGaAs HBTs is reported. The 1/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.",
author = "Shinichi Tanaka and H. Hayama and K. Honjo and A. Furukawa and T. Baba and M. Mizuta",
year = "1990",
month = "1",
day = "1",
language = "English",
volume = "26",
pages = "1439--1441",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "18",

}

TY - JOUR

T1 - Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors

AU - Tanaka, Shinichi

AU - Hayama, H.

AU - Honjo, K.

AU - Furukawa, A.

AU - Baba, T.

AU - Mizuta, M.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - The first measurement of low-frequency noise performance for self-aligned InAlAs/InGaAs HBTs is reported. The 1/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.

AB - The first measurement of low-frequency noise performance for self-aligned InAlAs/InGaAs HBTs is reported. The 1/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.

UR - http://www.scopus.com/inward/record.url?scp=0025469486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025469486&partnerID=8YFLogxK

M3 - Article

VL - 26

SP - 1439

EP - 1441

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 18

ER -