Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors

Shinichi Tanaka, H. Hayama, K. Honjo, A. Furukawa, T. Baba, M. Mizuta

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26 Citations (Scopus)

Abstract

The first measurement of low-frequency noise performance for self-aligned InAlAs/InGaAs HBTs is reported. The 1/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.

Original languageEnglish
Pages (from-to)1439-1441
Number of pages3
JournalElectronics Letters
Volume26
Issue number18
Publication statusPublished - 1990 Jan 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tanaka, S., Hayama, H., Honjo, K., Furukawa, A., Baba, T., & Mizuta, M. (1990). Low-frequency noise performance of self-aligned InAlAs/InGaAs heterojunction bipolar transistors. Electronics Letters, 26(18), 1439-1441.