The first measurement of low-frequency noise performance for self-aligned InAlAs/InGaAs HBTs is reported. The 1/f noise obtained was around 20 dB lower than that for AlGaAs/GaAs HBTs at a fixed frequency, which is considered to be caused by the low surface recombination velocity of InGaAs.
|Number of pages||3|
|Publication status||Published - 1990 Jan 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering