Low-Frequency Noise Performance of Self-Aligned InAlAs/InGaAs Heterojunction Bipolar Transistors.

S.Tanaka S.Tanaka, S.Tanaka N.HayamaA.FurukawaT.Baba M.Mizuta, K.Honjo K.Honjo, Shinichi Tanaka

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Cite this

@article{87912342890d4b0782d278f88379c1e5,

title = "Low-Frequency Noise Performance of Self-Aligned InAlAs/InGaAs Heterojunction Bipolar Transistors.",

author = "S.Tanaka S.Tanaka and M.Mizuta, {S.Tanaka N.HayamaA.FurukawaT.Baba} and K.Honjo K.Honjo and Shinichi Tanaka",

year = "1990",

month = aug,

day = "1",

language = "English",

volume = "26",

pages = "1439--1441",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

}

TY - JOUR

T1 - Low-Frequency Noise Performance of Self-Aligned InAlAs/InGaAs Heterojunction Bipolar Transistors.

AU - S.Tanaka, S.Tanaka

AU - M.Mizuta, S.Tanaka N.HayamaA.FurukawaT.Baba

AU - K.Honjo, K.Honjo

AU - Tanaka, Shinichi

PY - 1990/8/1

Y1 - 1990/8/1

M3 - Article

VL - 26

SP - 1439

EP - 1441

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

ER -