Low Noise and Low Distortion Performances of an AlGaN/GaN HFET

Yutaka Hirose, Yoshito Ikeda, Motonori Ishii, Tomohiro Murata, Kaoru Inoue, Tsuyoshi Tanaka, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We present ultra low noise- and wide dynamic range performances of an AlGaN/GaN heterostructure FET (HFET). An HFET fabricated on a high quality epitaxial layers grown on a semi-insulating SiC substrate exhibited impressively low minimum noise figure (NFmin) of 0.4 dB with 16 dB associated gain at 2 GHz. The low NF (near NFmin) operation was possible in a wide drain bias voltage range, i.e. from 3 V to 15 V. At the same time, the device showed low distortion character as indicated by the high third order input intercept point (IIP3), +13dBm. The excellent characteristics are attributed to three major factors: (1) high quality epitaxial layers that realized a high transconductance and very low buffer leakage current; (2) excellent device isolation made by selective thermal oxidation; (3) ultra low gate leakage current realized by Pd based gate. The results demonstrate that the AlGaN/GaN HFET is a strong candidate for front-end LNAs in various mobile communication systems where both the low noise and the wide dynamic range are required.

Original languageEnglish
Pages (from-to)2058-2064
Number of pages7
JournalIEICE Transactions on Electronics
VolumeE86-C
Issue number10
Publication statusPublished - 2003 Oct
Externally publishedYes

Fingerprint

Field effect transistors
Heterojunctions
Epitaxial layers
Leakage currents
Mobile telecommunication systems
Noise figure
Transconductance
Bias voltage
Buffers
Oxidation
Substrates
aluminum gallium nitride

Keywords

  • AlGaN/GaN HFET
  • Intermodulation distortion
  • Low noise amplifier
  • Noise figure (NF)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Hirose, Y., Ikeda, Y., Ishii, M., Murata, T., Inoue, K., Tanaka, T., ... Jimbo, T. (2003). Low Noise and Low Distortion Performances of an AlGaN/GaN HFET. IEICE Transactions on Electronics, E86-C(10), 2058-2064.

Low Noise and Low Distortion Performances of an AlGaN/GaN HFET. / Hirose, Yutaka; Ikeda, Yoshito; Ishii, Motonori; Murata, Tomohiro; Inoue, Kaoru; Tanaka, Tsuyoshi; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi.

In: IEICE Transactions on Electronics, Vol. E86-C, No. 10, 10.2003, p. 2058-2064.

Research output: Contribution to journalArticle

Hirose, Y, Ikeda, Y, Ishii, M, Murata, T, Inoue, K, Tanaka, T, Ishikawa, H, Egawa, T & Jimbo, T 2003, 'Low Noise and Low Distortion Performances of an AlGaN/GaN HFET', IEICE Transactions on Electronics, vol. E86-C, no. 10, pp. 2058-2064.
Hirose Y, Ikeda Y, Ishii M, Murata T, Inoue K, Tanaka T et al. Low Noise and Low Distortion Performances of an AlGaN/GaN HFET. IEICE Transactions on Electronics. 2003 Oct;E86-C(10):2058-2064.
Hirose, Yutaka ; Ikeda, Yoshito ; Ishii, Motonori ; Murata, Tomohiro ; Inoue, Kaoru ; Tanaka, Tsuyoshi ; Ishikawa, Hiroyasu ; Egawa, Takashi ; Jimbo, Takashi. / Low Noise and Low Distortion Performances of an AlGaN/GaN HFET. In: IEICE Transactions on Electronics. 2003 ; Vol. E86-C, No. 10. pp. 2058-2064.
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