Low Noise and Low Distortion Performances of an AlGaN/GaN HFET

Yutaka Hirose, Yoshito Ikeda, Motonori Ishii, Tomohiro Murata, Kaoru Inoue, Tsuyoshi Tanaka, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We present ultra low noise- and wide dynamic range performances of an AlGaN/GaN heterostructure FET (HFET). An HFET fabricated on a high quality epitaxial layers grown on a semi-insulating SiC substrate exhibited impressively low minimum noise figure (NFmin) of 0.4 dB with 16 dB associated gain at 2 GHz. The low NF (near NFmin) operation was possible in a wide drain bias voltage range, i.e. from 3 V to 15 V. At the same time, the device showed low distortion character as indicated by the high third order input intercept point (IIP3), +13dBm. The excellent characteristics are attributed to three major factors: (1) high quality epitaxial layers that realized a high transconductance and very low buffer leakage current; (2) excellent device isolation made by selective thermal oxidation; (3) ultra low gate leakage current realized by Pd based gate. The results demonstrate that the AlGaN/GaN HFET is a strong candidate for front-end LNAs in various mobile communication systems where both the low noise and the wide dynamic range are required.

Original languageEnglish
Pages (from-to)2058-2064
Number of pages7
JournalIEICE Transactions on Electronics
VolumeE86-C
Issue number10
Publication statusPublished - 2003 Oct

Keywords

  • AlGaN/GaN HFET
  • Intermodulation distortion
  • Low noise amplifier
  • Noise figure (NF)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Hirose, Y., Ikeda, Y., Ishii, M., Murata, T., Inoue, K., Tanaka, T., Ishikawa, H., Egawa, T., & Jimbo, T. (2003). Low Noise and Low Distortion Performances of an AlGaN/GaN HFET. IEICE Transactions on Electronics, E86-C(10), 2058-2064.