A new metal structure consisting of AuZnNi/Ti/Au has been proposed for forming low-resistance ohmic contacts to p-GaAs with a fine-pattern definition. The dependency of the contact resistance on the Ti-layer thickness indicated that an optimum amount of Ti is requred for reducing the contact resistance. A minimun contact resistance (0.3 12-mm) was obtained with 150-nm thick Ti attached to Be-implanted p-GaAs at a dose of 6X 1013 cm-3.
ASJC Scopus subject areas
- Physics and Astronomy(all)