Low-resistance ohmic contacts to p-GaAs

Makoto Hirano, Fumihiko Yanagawa

    Research output: Contribution to journalComment/debatepeer-review

    1 Citation (Scopus)


    A new metal structure consisting of AuZnNi/Ti/Au has been proposed for forming low-resistance ohmic contacts to p-GaAs with a fine-pattern definition. The dependency of the contact resistance on the Ti-layer thickness indicated that an optimum amount of Ti is requred for reducing the contact resistance. A minimun contact resistance (0.3 12-mm) was obtained with 150-nm thick Ti attached to Be-implanted p-GaAs at a dose of 6X 1013 cm-3.

    Original languageEnglish
    Pages (from-to)1268-1269
    Number of pages2
    JournalJapanese Journal of Applied Physics
    Issue number8
    Publication statusPublished - 1986 Aug

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)


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