LOW-RESISTANCE OHMIC CONTACTS TO p-GaAs.

Makoto Hirano, Fumihiko Yanagawa

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

A new metal structure consisting of AuZnNi/Ti/Au has been proposed for forming low-resistance ohmic contacts to p-GaAs with a fine-pattern definition. The dependency of the contact resistance on the Ti-layer thickness indicated that an optimum amount of Ti is required for reducing the contact resistance. A minimum contact resistance (0. 3 OMEGA multiplied by (times) mm) was obtained with 150-nm thick Ti attached to Be-implanted p-GaAs at a dose of 6 multiplied by 10**1**3 cm** minus **3.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Pages1268-1269
Number of pages2
Volume25
Edition8
Publication statusPublished - 1986 Aug
Externally publishedYes

Fingerprint

Ohmic contacts
Contact resistance
Metals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hirano, M., & Yanagawa, F. (1986). LOW-RESISTANCE OHMIC CONTACTS TO p-GaAs. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes (8 ed., Vol. 25, pp. 1268-1269)

LOW-RESISTANCE OHMIC CONTACTS TO p-GaAs. / Hirano, Makoto; Yanagawa, Fumihiko.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. Vol. 25 8. ed. 1986. p. 1268-1269.

Research output: Chapter in Book/Report/Conference proceedingChapter

Hirano, M & Yanagawa, F 1986, LOW-RESISTANCE OHMIC CONTACTS TO p-GaAs. in Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 8 edn, vol. 25, pp. 1268-1269.
Hirano M, Yanagawa F. LOW-RESISTANCE OHMIC CONTACTS TO p-GaAs. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. 8 ed. Vol. 25. 1986. p. 1268-1269
Hirano, Makoto ; Yanagawa, Fumihiko. / LOW-RESISTANCE OHMIC CONTACTS TO p-GaAs. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes. Vol. 25 8. ed. 1986. pp. 1268-1269
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