N-doped and In-N-codoped ZnO films were fabricated on quartz glass substrate by sol-gel spin coating. Their p-type conductivities were characterized by the Hall measurements, revealing low resistivities of the order of 10-1 Ω cm. Thin-film junctions comprising an undoped ZnO layer and a N-doped ZnO layer displayed the typical rectifying characteristics, suggesting formation of p-n homojunctions at the interfaces.
|Journal||Applied Physics Letters|
|Publication status||Published - 2006 Jun 19|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)