TY - JOUR
T1 - Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange
T2 - Operation of an n-channel polycrystalline Ge thin-film transistor
AU - Suzuki, Tatsuya
AU - Joseph, Benedict Mutunga
AU - Fukai, Misato
AU - Kamiko, Masao
AU - Kyuno, Kentaro
N1 - Funding Information:
Acknowledgment This work was partly supported by JSPS KAKENHI Grant Numbers JP25289231 and JP15K14130.
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/9
Y1 - 2017/9
N2 - Ge thin films have been prepared by layer-exchange metal-induced crystallization using AgSb alloy as a catalyst. Not only the crystallization of Ge, but also the incorporation of Sb atoms into the crystalline Ge layer and their activation have been realized during the process at a temperature as low as 330 °C. Thin-film transistors have been fabricated using the Ge thin films as channel layers and the operation of an n-channel transistor with an on/off ratio of over 300 has been demonstrated.
AB - Ge thin films have been prepared by layer-exchange metal-induced crystallization using AgSb alloy as a catalyst. Not only the crystallization of Ge, but also the incorporation of Sb atoms into the crystalline Ge layer and their activation have been realized during the process at a temperature as low as 330 °C. Thin-film transistors have been fabricated using the Ge thin films as channel layers and the operation of an n-channel transistor with an on/off ratio of over 300 has been demonstrated.
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U2 - 10.7567/APEX.10.095502
DO - 10.7567/APEX.10.095502
M3 - Article
AN - SCOPUS:85029176571
SN - 1882-0778
VL - 10
JO - Applied Physics Express
JF - Applied Physics Express
IS - 9
M1 - 095502
ER -