Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor

Tatsuya Suzuki, Benedict Mutunga Joseph, Misato Fukai, Masao Kamiko, Kentaro Kyuno

Research output: Research - peer-reviewArticle

Abstract

Ge thin films have been prepared by layer-exchange metal-induced crystallization using AgSb alloy as a catalyst. Not only the crystallization of Ge, but also the incorporation of Sb atoms into the crystalline Ge layer and their activation have been realized during the process at a temperature as low as 330 °C. Thin-film transistors have been fabricated using the Ge thin films as channel layers and the operation of an n-channel transistor with an on/off ratio of over 300 has been demonstrated.

LanguageEnglish
Article number095502
JournalApplied Physics Express
Volume10
Issue number9
DOIs
StatePublished - 2017 Sep 1

Fingerprint

Thin film transistors
Crystallization
Chemical activation
Doping (additives)
Thin films
Temperature
transistors
activation
crystallization
thin films
Transistors
Crystalline materials
Atoms
Catalysts
Metals
catalysts
metals
atoms
temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange : Operation of an n-channel polycrystalline Ge thin-film transistor. / Suzuki, Tatsuya; Joseph, Benedict Mutunga; Fukai, Misato; Kamiko, Masao; Kyuno, Kentaro.

In: Applied Physics Express, Vol. 10, No. 9, 095502, 01.09.2017.

Research output: Research - peer-reviewArticle

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