Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor

Tatsuya Suzuki, Benedict Mutunga Joseph, Misato Fukai, Masao Kamiko, Kentaro Kyuno

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

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