Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique

M. Watanabe, H. Muguruma, M. Asada, S. Arai

Research output: Contribution to journalArticle

17 Citations (Scopus)
Original languageEnglish
Pages (from-to)1803-1804
JournalJapanese Journal of Applied Physics
Volume29
Issue number9
Publication statusPublished - 1990 Jan 1

Cite this

Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique. / Watanabe, M.; Muguruma, H.; Asada, M.; Arai, S.

In: Japanese Journal of Applied Physics, Vol. 29, No. 9, 01.01.1990, p. 1803-1804.

Research output: Contribution to journalArticle

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AU - Watanabe, M.

AU - Muguruma, H.

AU - Asada, M.

AU - Arai, S.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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SN - 0021-4922

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