| Original language | English |
|---|---|
| Pages (from-to) | 1803-1804 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 29 |
| Issue number | 9 |
| Publication status | Published - 1990 Jan 1 |
Cite this
Watanabe, M., Muguruma, H., Asada, M., & Arai, S. (1990). Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique. Japanese Journal of Applied Physics, 29(9), 1803-1804.
Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique. / Watanabe, M.; Muguruma, H.; Asada, M.; Arai, S.
In: Japanese Journal of Applied Physics, Vol. 29, No. 9, 01.01.1990, p. 1803-1804.Research output: Contribution to journal › Article
Watanabe, M, Muguruma, H, Asada, M & Arai, S 1990, 'Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique', Japanese Journal of Applied Physics, vol. 29, no. 9, pp. 1803-1804.
Watanabe M, Muguruma H, Asada M, Arai S. Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique. Japanese Journal of Applied Physics. 1990 Jan 1;29(9):1803-1804.
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title = "Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique",
author = "M. Watanabe and H. Muguruma and M. Asada and S. Arai",
year = "1990",
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T1 - Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique
AU - Watanabe, M.
AU - Muguruma, H.
AU - Asada, M.
AU - Arai, S.
PY - 1990/1/1
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VL - 29
SP - 1803
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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
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