Original language | English |
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Pages (from-to) | 1803-1804 |
Journal | Japanese Journal of Applied Physics |
Volume | 29 |
Issue number | 9 |
Publication status | Published - 1990 Jan 1 |
Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique
M. Watanabe, H. Muguruma, M. Asada, S. Arai
Research output: Contribution to journal › Article › peer-review
18
Citations
(Scopus)