Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique

M. Watanabe, H. Muguruma, M. Asada, S. Arai

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1803-1804
Journal	Japanese Journal of Applied Physics
Volume	29
Issue number	9
Publication status	Published - 1990 Jan 1

Cite this

@article{8112f85aba054aefbd39029d314ac014,

title = "Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique",

author = "M. Watanabe and H. Muguruma and M. Asada and S. Arai",

year = "1990",

month = jan,

day = "1",

language = "English",

volume = "29",

pages = "1803--1804",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9",

}

TY - JOUR

T1 - Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique

AU - Watanabe, M.

AU - Muguruma, H.

AU - Asada, M.

AU - Arai, S.

PY - 1990/1/1

Y1 - 1990/1/1

M3 - Article

VL - 29

SP - 1803

EP - 1804

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9

ER -