Low temperature (~420 °C) expitaxial growth of CaF2/Si(111) by ionized-cluster-beam technique

M. Watanabe, H. Muguruma, M. Asada, S. Arai

Research output: Contribution to journalArticle

17 Citations (Scopus)
Original languageEnglish
Pages (from-to)1803-1804
JournalJapanese Journal of Applied Physics
Volume29
Issue number9
Publication statusPublished - 1990 Jan 1

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