Low temperature interlayer formation technology using a new siloxane polymer film

M. Suzuki, T. Homma, Y. Numasawa

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

A new technology for low-temperature dielectric film formation under Al wirings is described. This technology utilizes spin-on film formed from the organic siloxane polymer solution optimized to have minimal film shrinkage/stress generation during heat treatment. The optimized solution is composed of 62-mo1% tetra-ethoxy-silane [Si(OEt)4], 31-mo1% methyl-tri-ethoxy-silane [Me-Si(OEt)3], and 7-mo1%4 phosphorus-triethoxide [PO(OEt)3] oligomer in ethyl alcohol. Crack-free thick siloxane polymer film with no carbon is formed by three-step heat treatment processes (150°C hot plate baking, 400°C furnace annealing in N2, and 800°C furnace annealing in O2). The planarization capability of this film is superior to that of the conventional BPSG reflow film, and other film properties are as good as those of the CVD-PSG film.

Original languageEnglish
Pages173-179
Number of pages7
Publication statusPublished - 1990 Dec 1
Event1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA
Duration: 1990 Jun 121990 Jun 13

Other

Other1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference
CitySanta Clara, CA, USA
Period90/6/1290/6/13

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Suzuki, M., Homma, T., & Numasawa, Y. (1990). Low temperature interlayer formation technology using a new siloxane polymer film. 173-179. Paper presented at 1990 Proceedings of the Seventh International IEEE VLSI Multilevel Interconnection Conference, Santa Clara, CA, USA, .