Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12

Hideki Yokoi, Tetsuya Mizumoto

Research output: Contribution to conferencePaper

Abstract

The direct bonding between GaInAsP and Gd3Ga5O12 (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.

Original languageEnglish
Number of pages1
Publication statusPublished - 1998 Jan 1
EventProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland
Duration: 1998 Sep 141998 Sep 18

Other

OtherProceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
CityGlasgow, Scotland
Period98/9/1498/9/18

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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    Yokoi, H., & Mizumoto, T. (1998). Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12. Paper presented at Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland, .