Abstract
The direct bonding between GaInAsP and Gd3Ga5O12 (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.
| Original language | English |
|---|---|
| Title of host publication | Conference on Lasers and Electro-Optics Europe - Technical Digest |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 336 |
| Number of pages | 1 |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland Duration: 1998 Sep 14 → 1998 Sep 18 |
Other
| Other | Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 |
|---|---|
| City | Glasgow, Scotland |
| Period | 98/9/14 → 98/9/18 |
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ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
Cite this
Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12. / Yokoi, Hideki; Mizumoto, Tetsuya.
Conference on Lasers and Electro-Optics Europe - Technical Digest. Piscataway, NJ, United States : IEEE, 1998. p. 336.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12
AU - Yokoi, Hideki
AU - Mizumoto, Tetsuya
PY - 1998
Y1 - 1998
N2 - The direct bonding between GaInAsP and Gd3Ga5O12 (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.
AB - The direct bonding between GaInAsP and Gd3Ga5O12 (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.
UR - http://www.scopus.com/inward/record.url?scp=0031631418&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031631418&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0031631418
SP - 336
BT - Conference on Lasers and Electro-Optics Europe - Technical Digest
PB - IEEE
CY - Piscataway, NJ, United States
ER -