Abstract
The direct bonding between GaInAsP and Gd3Ga5O12 (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.
| Original language | English |
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| Number of pages | 1 |
| Publication status | Published - 1998 Jan 1 |
| Event | Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland Duration: 1998 Sep 14 → 1998 Sep 18 |
Other
| Other | Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 |
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| City | Glasgow, Scotland |
| Period | 98/9/14 → 98/9/18 |
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ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
Cite this
Yokoi, H., & Mizumoto, T. (1998). Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12. Paper presented at Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98, Glasgow, Scotland, .