Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12

Hideki Yokoi; Tetsuya Mizumoto

Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd₃Ga₅O₁₂

Hideki Yokoi, Tetsuya Mizumoto

Research output: Contribution to conference › Paper › peer-review

Abstract

The direct bonding between GaInAsP and Gd₃Ga₅O₁₂ (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.

Original language	English
Number of pages	1
Publication status	Published - 1998 Jan 1
Event	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 - Glasgow, Scotland Duration: 1998 Sep 14 → 1998 Sep 18

Other

Other	Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98
City	Glasgow, Scotland
Period	98/9/14 → 98/9/18

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

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title = "Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12",

abstract = "The direct bonding between GaInAsP and Gd3Ga5O12 (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.",

author = "Hideki Yokoi and Tetsuya Mizumoto",

year = "1998",

month = jan,

day = "1",

language = "English",

note = "Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98 ; Conference date: 14-09-1998 Through 18-09-1998",

}

TY - CONF

T1 - Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The direct bonding between GaInAsP and Gd3Ga5O12 (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.

AB - The direct bonding between GaInAsP and Gd3Ga5O12 (GGG) is reported. All wafers were chemically treated, and contacted at room temperature. The bonded samples were subjected to various device fabrication processes such as baking, thermal annealing, wet etching and exposure to the plasma discharge, for examining the bonding durability. The bonding was achieved with the heat treatment at temperatures between 110 and 330°C. The samples bonded by the heat treatment at 110 and 220°C remained bonded against all the processes. The bonding between a terraced laser diode and GGG was also performed. The GaInAsP etched surface was bonded with GGG by heat treatment at temperatures between 110 and 220°C.

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M3 - Paper

AN - SCOPUS:0031631418

T2 - Proceedings of the 1998 International Symposium on Information Theory, CLEO/EUROPE'98

Y2 - 14 September 1998 through 18 September 1998

ER -