Low temperature wafer direct bonding between GaZnAsP etch stop layer and Gd3GasO12.

Hideki Yokoi, Tetsuya Mizumoto

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)336
JournalEuropean Physical Society
Publication statusPublished - 1998 Sep 17

Cite this

Low temperature wafer direct bonding between GaZnAsP etch stop layer and Gd3GasO12. / Yokoi, Hideki; Mizumoto, Tetsuya.

In: European Physical Society, 17.09.1998, p. 336.

Research output: Contribution to journalArticle

@article{f72a991183ba444098ca0304be90e9d3,
title = "Low temperature wafer direct bonding between GaZnAsP etch stop layer and Gd3GasO12.",
author = "Hideki Yokoi and Tetsuya Mizumoto",
year = "1998",
month = "9",
day = "17",
language = "English",
pages = "336",
journal = "European Physical Society",

}

TY - JOUR

T1 - Low temperature wafer direct bonding between GaZnAsP etch stop layer and Gd3GasO12.

AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

PY - 1998/9/17

Y1 - 1998/9/17

M3 - Article

SP - 336

JO - European Physical Society

JF - European Physical Society

ER -