| Original language | English |
|---|---|
| Pages (from-to) | 336 |
| Journal | European Physical Society |
| Publication status | Published - 1998 Sep 17 |
Cite this
Yokoi, H., & Mizumoto, T. (1998). Low temperature wafer direct bonding between GaZnAsP etch stop layer and Gd3GasO12. European Physical Society, 336.