Low temperature wafer direct bonding between GaZnAsP etch stop layer and Gd3GasO12.

Hideki Yokoi, Tetsuya Mizumoto

Research output: Contribution to journal › Article

Original languageEnglish
Pages (from-to)336
JournalEuropean Physical Society
Publication statusPublished - 1998 Sep 17

Cite this

Low temperature wafer direct bonding between GaZnAsP etch stop layer and Gd3GasO12. / Yokoi, Hideki; Mizumoto, Tetsuya.

In: European Physical Society, 17.09.1998, p. 336.

Research output: Contribution to journal › Article

Yokoi, H & Mizumoto, T 1998, 'Low temperature wafer direct bonding between GaZnAsP etch stop layer and Gd3GasO12.', European Physical Society, pp. 336.
Yokoi H, Mizumoto T. Low temperature wafer direct bonding between GaZnAsP etch stop layer and Gd3GasO12. European Physical Society. 1998 Sep 17;336.
Yokoi, Hideki ; Mizumoto, Tetsuya. / Low temperature wafer direct bonding between GaZnAsP etch stop layer and Gd3GasO12. In: European Physical Society. 1998 ; pp. 336.
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