Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide

K. S. Seol, A. Ieki, Y. Ohki, Hiroyuki Nishikawa, M. Takiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The photoluminescence (PL) spectra from P+- or B+-implanted thermally grown film obtained by synchrotron radiation and excimer laser are studied and the nature of the defects induced by the ion implantation is discussed. Results show that under the excitation of KrF excimer laser, three PL bands at 4.3 eV, 2.7 eV, and 1.9 eV are observed. As for the PL bands at 4.3 eV and 1.9 eV, the intensity increases with a decrease in the temperature, while it decreases for the PL at 2.7 eV. From the similarities of the temperature dependence and the decay profile between the present ion-implanted SiO2 film and the well-identified bulk silica glass, the two PL bands at 4.3 eV and 2.7 eV are attributable to the oxygen vacancy, while the PL at 1.9 eV is from NBOHC.

Original languageEnglish
Title of host publicationProceedings of the Symposium on Electrical Insulating Materials
Place of PublicationTokyo, Japan
PublisherInst of Electrical Engineers of Japan
Pages85-88
Number of pages4
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 International Symposium on Electrical Insulating Materials - Tokyo, Jpn
Duration: 1995 Sep 171995 Sep 20

Other

OtherProceedings of the 1995 International Symposium on Electrical Insulating Materials
CityTokyo, Jpn
Period95/9/1795/9/20

Fingerprint

Luminescence
Photoluminescence
Silica
Defects
Excimer lasers
Oxygen vacancies
Fused silica
Synchrotron radiation
Ion implantation
Temperature
Ions

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Seol, K. S., Ieki, A., Ohki, Y., Nishikawa, H., & Takiyama, M. (1995). Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide. In Proceedings of the Symposium on Electrical Insulating Materials (pp. 85-88). Tokyo, Japan: Inst of Electrical Engineers of Japan.

Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide. / Seol, K. S.; Ieki, A.; Ohki, Y.; Nishikawa, Hiroyuki; Takiyama, M.

Proceedings of the Symposium on Electrical Insulating Materials. Tokyo, Japan : Inst of Electrical Engineers of Japan, 1995. p. 85-88.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Seol, KS, Ieki, A, Ohki, Y, Nishikawa, H & Takiyama, M 1995, Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide. in Proceedings of the Symposium on Electrical Insulating Materials. Inst of Electrical Engineers of Japan, Tokyo, Japan, pp. 85-88, Proceedings of the 1995 International Symposium on Electrical Insulating Materials, Tokyo, Jpn, 95/9/17.
Seol KS, Ieki A, Ohki Y, Nishikawa H, Takiyama M. Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide. In Proceedings of the Symposium on Electrical Insulating Materials. Tokyo, Japan: Inst of Electrical Engineers of Japan. 1995. p. 85-88
Seol, K. S. ; Ieki, A. ; Ohki, Y. ; Nishikawa, Hiroyuki ; Takiyama, M. / Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide. Proceedings of the Symposium on Electrical Insulating Materials. Tokyo, Japan : Inst of Electrical Engineers of Japan, 1995. pp. 85-88
@inproceedings{9cb3af6a9f7f4876979ebe56cd86a57a,
title = "Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide",
abstract = "The photoluminescence (PL) spectra from P+- or B+-implanted thermally grown film obtained by synchrotron radiation and excimer laser are studied and the nature of the defects induced by the ion implantation is discussed. Results show that under the excitation of KrF excimer laser, three PL bands at 4.3 eV, 2.7 eV, and 1.9 eV are observed. As for the PL bands at 4.3 eV and 1.9 eV, the intensity increases with a decrease in the temperature, while it decreases for the PL at 2.7 eV. From the similarities of the temperature dependence and the decay profile between the present ion-implanted SiO2 film and the well-identified bulk silica glass, the two PL bands at 4.3 eV and 2.7 eV are attributable to the oxygen vacancy, while the PL at 1.9 eV is from NBOHC.",
author = "Seol, {K. S.} and A. Ieki and Y. Ohki and Hiroyuki Nishikawa and M. Takiyama",
year = "1995",
language = "English",
pages = "85--88",
booktitle = "Proceedings of the Symposium on Electrical Insulating Materials",
publisher = "Inst of Electrical Engineers of Japan",

}

TY - GEN

T1 - Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide

AU - Seol, K. S.

AU - Ieki, A.

AU - Ohki, Y.

AU - Nishikawa, Hiroyuki

AU - Takiyama, M.

PY - 1995

Y1 - 1995

N2 - The photoluminescence (PL) spectra from P+- or B+-implanted thermally grown film obtained by synchrotron radiation and excimer laser are studied and the nature of the defects induced by the ion implantation is discussed. Results show that under the excitation of KrF excimer laser, three PL bands at 4.3 eV, 2.7 eV, and 1.9 eV are observed. As for the PL bands at 4.3 eV and 1.9 eV, the intensity increases with a decrease in the temperature, while it decreases for the PL at 2.7 eV. From the similarities of the temperature dependence and the decay profile between the present ion-implanted SiO2 film and the well-identified bulk silica glass, the two PL bands at 4.3 eV and 2.7 eV are attributable to the oxygen vacancy, while the PL at 1.9 eV is from NBOHC.

AB - The photoluminescence (PL) spectra from P+- or B+-implanted thermally grown film obtained by synchrotron radiation and excimer laser are studied and the nature of the defects induced by the ion implantation is discussed. Results show that under the excitation of KrF excimer laser, three PL bands at 4.3 eV, 2.7 eV, and 1.9 eV are observed. As for the PL bands at 4.3 eV and 1.9 eV, the intensity increases with a decrease in the temperature, while it decreases for the PL at 2.7 eV. From the similarities of the temperature dependence and the decay profile between the present ion-implanted SiO2 film and the well-identified bulk silica glass, the two PL bands at 4.3 eV and 2.7 eV are attributable to the oxygen vacancy, while the PL at 1.9 eV is from NBOHC.

UR - http://www.scopus.com/inward/record.url?scp=0029492372&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029492372&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029492372

SP - 85

EP - 88

BT - Proceedings of the Symposium on Electrical Insulating Materials

PB - Inst of Electrical Engineers of Japan

CY - Tokyo, Japan

ER -