Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide

K. S. Seol, A. Ieki, Y. Ohki, H. Nishikawa, M. Takiyama

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

The photoluminescence (PL) spectra from P+- or B+-implanted thermally grown film obtained by synchrotron radiation and excimer laser are studied and the nature of the defects induced by the ion implantation is discussed. Results show that under the excitation of KrF excimer laser, three PL bands at 4.3 eV, 2.7 eV, and 1.9 eV are observed. As for the PL bands at 4.3 eV and 1.9 eV, the intensity increases with a decrease in the temperature, while it decreases for the PL at 2.7 eV. From the similarities of the temperature dependence and the decay profile between the present ion-implanted SiO2 film and the well-identified bulk silica glass, the two PL bands at 4.3 eV and 2.7 eV are attributable to the oxygen vacancy, while the PL at 1.9 eV is from NBOHC.

Original languageEnglish
Pages85-88
Number of pages4
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 International Symposium on Electrical Insulating Materials - Tokyo, Jpn
Duration: 1995 Sep 171995 Sep 20

Other

OtherProceedings of the 1995 International Symposium on Electrical Insulating Materials
CityTokyo, Jpn
Period95/9/1795/9/20

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Luminescence properties of defects in P<sup>+</sup>- or B<sup>+</sup>-implanted thermally grown silicon dioxide'. Together they form a unique fingerprint.

  • Cite this

    Seol, K. S., Ieki, A., Ohki, Y., Nishikawa, H., & Takiyama, M. (1995). Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide. 85-88. Paper presented at Proceedings of the 1995 International Symposium on Electrical Insulating Materials, Tokyo, Jpn, .