Luminescence properties of sol-gel synthesized silica glass induced by an ArF excimer laser

K. Mukasa, M. Ono, R. Wakabayashi, K. Ishii, Y. Ohki, Hiroyuki Nishikawa

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

When sol-gel synthesized silica glass containing about 260 ppm of OH groups is irradiated with an ArF excimer laser, photoluminescence appears at 1.9 eV (650 nm). From measurements of luminescence lifetime, the absorption spectrum and electron-spin-resonance spectroscopy, the luminescence is thought to be due to a non-bridging oxygen hole centre, a kind of point defect in silica glass.

Original languageEnglish
Pages (from-to)283-285
Number of pages3
JournalJournal of Physics D: Applied Physics
Volume30
Issue number2
DOIs
Publication statusPublished - 1997 Jan 21
Externally publishedYes

Fingerprint

silica glass
Excimer lasers
Fused silica
excimer lasers
Sol-gels
Luminescence
gels
luminescence
Electron spin resonance spectroscopy
Point defects
point defects
Absorption spectra
electron paramagnetic resonance
Photoluminescence
Oxygen
absorption spectra
photoluminescence
life (durability)
oxygen
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Luminescence properties of sol-gel synthesized silica glass induced by an ArF excimer laser. / Mukasa, K.; Ono, M.; Wakabayashi, R.; Ishii, K.; Ohki, Y.; Nishikawa, Hiroyuki.

In: Journal of Physics D: Applied Physics, Vol. 30, No. 2, 21.01.1997, p. 283-285.

Research output: Contribution to journalArticle

Mukasa, K. ; Ono, M. ; Wakabayashi, R. ; Ishii, K. ; Ohki, Y. ; Nishikawa, Hiroyuki. / Luminescence properties of sol-gel synthesized silica glass induced by an ArF excimer laser. In: Journal of Physics D: Applied Physics. 1997 ; Vol. 30, No. 2. pp. 283-285.
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