Luminescence properties of sol-gel synthesized silica glass induced by an ArF excimer laser

K. Mukasa; M. Ono; R. Wakabayashi; K. Ishii; Y. Ohki; H. Nishikawa

doi:10.1088/0022-3727/30/2/017

Luminescence properties of sol-gel synthesized silica glass induced by an ArF excimer laser

K. Mukasa, M. Ono, R. Wakabayashi, K. Ishii, Y. Ohki, H. Nishikawa

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

When sol-gel synthesized silica glass containing about 260 ppm of OH groups is irradiated with an ArF excimer laser, photoluminescence appears at 1.9 eV (650 nm). From measurements of luminescence lifetime, the absorption spectrum and electron-spin-resonance spectroscopy, the luminescence is thought to be due to a non-bridging oxygen hole centre, a kind of point defect in silica glass.

Original language	English
Pages (from-to)	283-285
Number of pages	3
Journal	Journal of Physics D: Applied Physics
Volume	30
Issue number	2
DOIs	https://doi.org/10.1088/0022-3727/30/2/017
Publication status	Published - 1997 Jan 21
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/30/2/017

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abstract = "When sol-gel synthesized silica glass containing about 260 ppm of OH groups is irradiated with an ArF excimer laser, photoluminescence appears at 1.9 eV (650 nm). From measurements of luminescence lifetime, the absorption spectrum and electron-spin-resonance spectroscopy, the luminescence is thought to be due to a non-bridging oxygen hole centre, a kind of point defect in silica glass.",

author = "K. Mukasa and M. Ono and R. Wakabayashi and K. Ishii and Y. Ohki and H. Nishikawa",

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T1 - Luminescence properties of sol-gel synthesized silica glass induced by an ArF excimer laser

AU - Mukasa, K.

AU - Ono, M.

AU - Wakabayashi, R.

AU - Ishii, K.

AU - Ohki, Y.

AU - Nishikawa, H.

PY - 1997/1/21

Y1 - 1997/1/21

N2 - When sol-gel synthesized silica glass containing about 260 ppm of OH groups is irradiated with an ArF excimer laser, photoluminescence appears at 1.9 eV (650 nm). From measurements of luminescence lifetime, the absorption spectrum and electron-spin-resonance spectroscopy, the luminescence is thought to be due to a non-bridging oxygen hole centre, a kind of point defect in silica glass.

AB - When sol-gel synthesized silica glass containing about 260 ppm of OH groups is irradiated with an ArF excimer laser, photoluminescence appears at 1.9 eV (650 nm). From measurements of luminescence lifetime, the absorption spectrum and electron-spin-resonance spectroscopy, the luminescence is thought to be due to a non-bridging oxygen hole centre, a kind of point defect in silica glass.

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U2 - 10.1088/0022-3727/30/2/017

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JO - Journal Physics D: Applied Physics

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ER -

Luminescence properties of sol-gel synthesized silica glass induced by an ArF excimer laser

Abstract

ASJC Scopus subject areas

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