Magnetooptic waveguide with SiO2 cladding layer integrated on InP substrate by wafer direct bonding

Hideki Yokoi, Tetsuya Mizumoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Magnetooptic waveguides with a SiO2 cladding layer were fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct bonding between InP and sputter-deposited SiO2 on a Gd3Ga5O12 substrate was investigated. Bonding was achieved by surface treatment of both wafers and subsequent heat treatment in H2 ambient. By applying heat treatment in H2 ambient at temperatures ranging between 110 and 220°C, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.

Original languageEnglish
Pages (from-to)7230-7232
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number12 A
Publication statusPublished - 1997 Dec
Externally publishedYes

Fingerprint

Magnetooptical effects
Waveguides
wafers
waveguides
heat treatment
Substrates
Heat treatment
isolators
surface treatment
deterioration
Deterioration
Surface treatment
Semiconductor lasers
Optical properties
semiconductor lasers
optical properties
Temperature
temperature

Keywords

  • InP
  • Magnetooptic waveguide
  • SiO optical isolator
  • Wafer direct bonding

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

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AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

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N2 - Magnetooptic waveguides with a SiO2 cladding layer were fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct bonding between InP and sputter-deposited SiO2 on a Gd3Ga5O12 substrate was investigated. Bonding was achieved by surface treatment of both wafers and subsequent heat treatment in H2 ambient. By applying heat treatment in H2 ambient at temperatures ranging between 110 and 220°C, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.

AB - Magnetooptic waveguides with a SiO2 cladding layer were fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct bonding between InP and sputter-deposited SiO2 on a Gd3Ga5O12 substrate was investigated. Bonding was achieved by surface treatment of both wafers and subsequent heat treatment in H2 ambient. By applying heat treatment in H2 ambient at temperatures ranging between 110 and 220°C, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.

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KW - SiO optical isolator

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