Magnetooptic waveguide with SiO2 cladding layer integrated on InP substrate by wafer direct bonding

Hideki Yokoi; Tetsuya Mizumoto

doi:10.1143/jjap.36.7230

Magnetooptic waveguide with SiO₂ cladding layer integrated on InP substrate by wafer direct bonding

Hideki Yokoi, Tetsuya Mizumoto

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Magnetooptic waveguides with a SiO₂ cladding layer were fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct bonding between InP and sputter-deposited SiO₂ on a Gd₃Ga₅O₁₂ substrate was investigated. Bonding was achieved by surface treatment of both wafers and subsequent heat treatment in H₂ ambient. By applying heat treatment in H₂ ambient at temperatures ranging between 110 and 220°C, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.

Original language	English
Pages (from-to)	7230-7232
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	12 A
DOIs	https://doi.org/10.1143/jjap.36.7230
Publication status	Published - 1997 Dec
Externally published	Yes

Keywords

InP
Magnetooptic waveguide
SiO optical isolator
Wafer direct bonding

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.36.7230

Cite this

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abstract = "Magnetooptic waveguides with a SiO2 cladding layer were fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct bonding between InP and sputter-deposited SiO2 on a Gd3Ga5O12 substrate was investigated. Bonding was achieved by surface treatment of both wafers and subsequent heat treatment in H2 ambient. By applying heat treatment in H2 ambient at temperatures ranging between 110 and 220°C, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.",

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author = "Hideki Yokoi and Tetsuya Mizumoto",

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AU - Yokoi, Hideki

AU - Mizumoto, Tetsuya

PY - 1997/12

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N2 - Magnetooptic waveguides with a SiO2 cladding layer were fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct bonding between InP and sputter-deposited SiO2 on a Gd3Ga5O12 substrate was investigated. Bonding was achieved by surface treatment of both wafers and subsequent heat treatment in H2 ambient. By applying heat treatment in H2 ambient at temperatures ranging between 110 and 220°C, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.

AB - Magnetooptic waveguides with a SiO2 cladding layer were fabricated on an InP substrate by the wafer direct bonding technique for the purpose of integrating a laser diode and an optical isolator. First, direct bonding between InP and sputter-deposited SiO2 on a Gd3Ga5O12 substrate was investigated. Bonding was achieved by surface treatment of both wafers and subsequent heat treatment in H2 ambient. By applying heat treatment in H2 ambient at temperatures ranging between 110 and 220°C, the magnetooptic waveguides were bonded to the InP substrate without deterioration of their optical properties.

KW - InP

KW - Magnetooptic waveguide

KW - SiO optical isolator

KW - Wafer direct bonding

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