Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET

Shohei Nakamura, Jun Kawasaki, Yuichi Kumagai, Kimiyoshi Usami

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

This paper aims to measure the minimum energy point of logic circuits using SOTB and a bulk device, and to study the characteristics of logic circuits in SOTB at ultra-low voltage. We designed test chips including 32bit adder and 16bit multiplier circuits in 65nm SOTB and 65nm bulk devices. Measurement results revealed that the minimum energy of SOTB is about 39-49% smaller than that of the bulk The minimum energy voltage of SOTB is 0.25-0.3V, while that of the bulk is 0.35-0.45V. Measurement results also revealed that energy minimum voltage is proportional to the absolute temperature.

Original languageEnglish
Title of host publicationEUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages193-196
Number of pages4
ISBN (Print)9781479969111
DOIs
Publication statusPublished - 2015 Mar 18
Event2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy
Duration: 2015 Jan 262015 Jan 28

Other

Other2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015
CountryItaly
CityBologna
Period15/1/2615/1/28

Fingerprint

Silicon
Logic circuits
Electric potential
Adders
Networks (circuits)
Temperature

Keywords

  • Energy minimum point
  • Silicon-on-Thin-BOX MOSFET
  • Ultra-low voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Nakamura, S., Kawasaki, J., Kumagai, Y., & Usami, K. (2015). Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (pp. 193-196). [7063746] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ULIS.2015.7063746

Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. / Nakamura, Shohei; Kawasaki, Jun; Kumagai, Yuichi; Usami, Kimiyoshi.

EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc., 2015. p. 193-196 7063746.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nakamura, S, Kawasaki, J, Kumagai, Y & Usami, K 2015, Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. in EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon., 7063746, Institute of Electrical and Electronics Engineers Inc., pp. 193-196, 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015, Bologna, Italy, 15/1/26. https://doi.org/10.1109/ULIS.2015.7063746
Nakamura S, Kawasaki J, Kumagai Y, Usami K. Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. In EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc. 2015. p. 193-196. 7063746 https://doi.org/10.1109/ULIS.2015.7063746
Nakamura, Shohei ; Kawasaki, Jun ; Kumagai, Yuichi ; Usami, Kimiyoshi. / Measurement of the minimum energy point in Silicon on Thin-BOX(SOTB) and bulk MOSFET. EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 193-196
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