Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method

Naoki Ono, Kounosuke Kitamura, Ken Nakajima, Yasushi Shimanuki

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000°C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conventional tensile tests. Young's modulus in the temperature range from 800°C to 1000°C did not decrease as much as expected. The dependency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5 x 1018 atoms/cm3.

Original languageEnglish
Pages (from-to)368-371
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number2 A
Publication statusPublished - 2000
Externally publishedYes

Fingerprint

Boron
modulus of elasticity
boron
Elastic moduli
Single crystals
Silicon
vibration
single crystals
silicon
tensile tests
Temperature
temperature
vibration mode
Vibrations (mechanical)
room temperature
Atoms
atoms

Keywords

  • Boron concentration
  • Flexural vibration method
  • Silicon single crystal
  • Young's modulus

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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T1 - Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method

AU - Ono, Naoki

AU - Kitamura, Kounosuke

AU - Nakajima, Ken

AU - Shimanuki, Yasushi

PY - 2000

Y1 - 2000

N2 - Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000°C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conventional tensile tests. Young's modulus in the temperature range from 800°C to 1000°C did not decrease as much as expected. The dependency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5 x 1018 atoms/cm3.

AB - Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000°C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conventional tensile tests. Young's modulus in the temperature range from 800°C to 1000°C did not decrease as much as expected. The dependency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5 x 1018 atoms/cm3.

KW - Boron concentration

KW - Flexural vibration method

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KW - Young's modulus

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