Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method

Naoki Ono; Kounosuke Kitamura; Ken Nakajima; Yasushi Shimanuki

doi:10.1143/jjap.39.368

Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method

Naoki Ono, Kounosuke Kitamura, Ken Nakajima, Yasushi Shimanuki

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000°C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conventional tensile tests. Young's modulus in the temperature range from 800°C to 1000°C did not decrease as much as expected. The dependency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5 x 10¹⁸ atoms/cm3.

Original language	English
Pages (from-to)	368-371
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	2 A
DOIs	https://doi.org/10.1143/jjap.39.368
Publication status	Published - 2000
Externally published	Yes

Keywords

Boron concentration
Flexural vibration method
Silicon single crystal
Young's modulus

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.39.368

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Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method. / Ono, Naoki; Kitamura, Kounosuke; Nakajima, Ken et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 2 A, 2000, p. 368-371.

Research output: Contribution to journal › Article › peer-review

Ono, N, Kitamura, K, Nakajima, K & Shimanuki, Y 2000, 'Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 39, no. 2 A, pp. 368-371. https://doi.org/10.1143/jjap.39.368

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Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method

Abstract

Keywords

ASJC Scopus subject areas

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