Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method

Naoki Ono, Kounosuke Kitamura, Ken Nakajima, Yasushi Shimanuki

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Abstract

Young's moduli of silicon single crystals were measured in the temperature range from room temperature to 1000°C. The moduli were calculated from the resonance frequencies in the flexural mode of vibration. This method for measuring the moduli is thought to be more reliable than using the conventional tensile tests. Young's modulus in the temperature range from 800°C to 1000°C did not decrease as much as expected. The dependency on boron concentration was also investigated and found to be minimal in this temperature range and at boron concentrations of up to 8.5 x 1018 atoms/cm3.

Original languageEnglish
Pages (from-to)368-371
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number2 A
Publication statusPublished - 2000 Dec 1

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Keywords

  • Boron concentration
  • Flexural vibration method
  • Silicon single crystal
  • Young's modulus

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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