Mechanical and field emission properties of CGed Si(C,N) films synthesized by PECVD from HMDS precursor

Y. S. Li; H. Kiyono; S. Shimada; X. Lu; A. Hirose

doi:10.1016/j.diamond.2006.03.003

Mechanical and field emission properties of CGed Si(C,N) films synthesized by PECVD from HMDS precursor

Y. S. Li, H. Kiyono, S. Shimada, X. Lu, A. Hirose

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H₂/N₂ plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiN_x films were produced from Ar/H₂ and Ar/H₂/N₂ thermal plasma, respectively. The CGed SiC-SiN_x film was obtained by changing N₂ flow rate from 2 L/min to zero in Ar/H₂/N₂ during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiN_x and an innermost layer of amorphous SiN_x. The CGed SiN_x-SiC film, in which SiN_x acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H₂ to Ar/H₂/N₂. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiN_x films.

Original language	English
Pages (from-to)	1727-1731
Number of pages	5
Journal	Diamond and Related Materials
Volume	15
Issue number	10
DOIs	https://doi.org/10.1016/j.diamond.2006.03.003
Publication status	Published - 2006 Oct 1

Keywords

Field emission
Liquid alkoxide precursor
Plasma CVD
SiCN film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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Li, Y. S., Kiyono, H., Shimada, S., Lu, X., & Hirose, A. (2006). Mechanical and field emission properties of CGed Si(C,N) films synthesized by PECVD from HMDS precursor. Diamond and Related Materials, 15(10), 1727-1731. https://doi.org/10.1016/j.diamond.2006.03.003

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abstract = "Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H2/N2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiNx films were produced from Ar/H2 and Ar/H2/N2 thermal plasma, respectively. The CGed SiC-SiNx film was obtained by changing N2 flow rate from 2 L/min to zero in Ar/H2/N2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiNx and an innermost layer of amorphous SiNx. The CGed SiNx-SiC film, in which SiNx acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H2 to Ar/H2/N2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiNx films.",

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author = "Li, {Y. S.} and H. Kiyono and S. Shimada and X. Lu and A. Hirose",

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AU - Li, Y. S.

AU - Kiyono, H.

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AU - Lu, X.

AU - Hirose, A.

PY - 2006/10/1

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N2 - Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H2/N2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiNx films were produced from Ar/H2 and Ar/H2/N2 thermal plasma, respectively. The CGed SiC-SiNx film was obtained by changing N2 flow rate from 2 L/min to zero in Ar/H2/N2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiNx and an innermost layer of amorphous SiNx. The CGed SiNx-SiC film, in which SiNx acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H2 to Ar/H2/N2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiNx films.

AB - Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H2/N2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiNx films were produced from Ar/H2 and Ar/H2/N2 thermal plasma, respectively. The CGed SiC-SiNx film was obtained by changing N2 flow rate from 2 L/min to zero in Ar/H2/N2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiNx and an innermost layer of amorphous SiNx. The CGed SiNx-SiC film, in which SiNx acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H2 to Ar/H2/N2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiNx films.

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