Mechanical and field emission properties of CGed Si(C,N) films synthesized by PECVD from HMDS precursor

Y. S. Li; H. Kiyono; S. Shimada; X. Lu; A. Hirose

doi:10.1016/j.diamond.2006.03.003

Mechanical and field emission properties of CGed Si(C,N) films synthesized by PECVD from HMDS precursor

Y. S. Li, H. Kiyono, S. Shimada, X. Lu, A. Hirose

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H₂/N₂ plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiN_x films were produced from Ar/H₂ and Ar/H₂/N₂ thermal plasma, respectively. The CGed SiC-SiN_x film was obtained by changing N₂ flow rate from 2 L/min to zero in Ar/H₂/N₂ during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiN_x and an innermost layer of amorphous SiN_x. The CGed SiN_x-SiC film, in which SiN_x acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H₂ to Ar/H₂/N₂. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiN_x films.

Original language	English
Pages (from-to)	1727-1731
Number of pages	5
Journal	Diamond and Related Materials
Volume	15
Issue number	10
DOIs	https://doi.org/10.1016/j.diamond.2006.03.003
Publication status	Published - 2006 Oct 1
Externally published	Yes

Keywords

Field emission
Liquid alkoxide precursor
Plasma CVD
SiCN film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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title = "Mechanical and field emission properties of CGed Si(C,N) films synthesized by PECVD from HMDS precursor",

abstract = "Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H2/N2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiNx films were produced from Ar/H2 and Ar/H2/N2 thermal plasma, respectively. The CGed SiC-SiNx film was obtained by changing N2 flow rate from 2 L/min to zero in Ar/H2/N2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiNx and an innermost layer of amorphous SiNx. The CGed SiNx-SiC film, in which SiNx acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H2 to Ar/H2/N2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiNx films.",

keywords = "Field emission, Liquid alkoxide precursor, Plasma CVD, SiCN film",

author = "Li, {Y. S.} and H. Kiyono and S. Shimada and X. Lu and A. Hirose",

year = "2006",

month = oct,

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doi = "10.1016/j.diamond.2006.03.003",

language = "English",

volume = "15",

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T1 - Mechanical and field emission properties of CGed Si(C,N) films synthesized by PECVD from HMDS precursor

AU - Li, Y. S.

AU - Kiyono, H.

AU - Shimada, S.

AU - Lu, X.

AU - Hirose, A.

PY - 2006/10/1

Y1 - 2006/10/1

N2 - Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H2/N2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiNx films were produced from Ar/H2 and Ar/H2/N2 thermal plasma, respectively. The CGed SiC-SiNx film was obtained by changing N2 flow rate from 2 L/min to zero in Ar/H2/N2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiNx and an innermost layer of amorphous SiNx. The CGed SiNx-SiC film, in which SiNx acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H2 to Ar/H2/N2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiNx films.

AB - Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H2/N2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiNx films were produced from Ar/H2 and Ar/H2/N2 thermal plasma, respectively. The CGed SiC-SiNx film was obtained by changing N2 flow rate from 2 L/min to zero in Ar/H2/N2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiNx and an innermost layer of amorphous SiNx. The CGed SiNx-SiC film, in which SiNx acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H2 to Ar/H2/N2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiNx films.

KW - Field emission

KW - Liquid alkoxide precursor

KW - Plasma CVD

KW - SiCN film

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