Abstract
Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H2/N2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiNx films were produced from Ar/H2 and Ar/H2/N2 thermal plasma, respectively. The CGed SiC-SiNx film was obtained by changing N2 flow rate from 2 L/min to zero in Ar/H2/N2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiNx and an innermost layer of amorphous SiNx. The CGed SiNx-SiC film, in which SiNx acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H2 to Ar/H2/N2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiNx films.
| Original language | English |
|---|---|
| Pages (from-to) | 1727-1731 |
| Number of pages | 5 |
| Journal | Diamond and Related Materials |
| Volume | 15 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2006 Oct |
| Externally published | Yes |
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Keywords
- Field emission
- Liquid alkoxide precursor
- Plasma CVD
- SiCN film
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Mechanical and field emission properties of CGed Si(C,N) films synthesized by PECVD from HMDS precursor. / Li, Y. S.; Kiyono, Hajime; Shimada, S.; Lu, X.; Hirose, A.
In: Diamond and Related Materials, Vol. 15, No. 10, 10.2006, p. 1727-1731.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Mechanical and field emission properties of CGed Si(C,N) films synthesized by PECVD from HMDS precursor
AU - Li, Y. S.
AU - Kiyono, Hajime
AU - Shimada, S.
AU - Lu, X.
AU - Hirose, A.
PY - 2006/10
Y1 - 2006/10
N2 - Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H2/N2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiNx films were produced from Ar/H2 and Ar/H2/N2 thermal plasma, respectively. The CGed SiC-SiNx film was obtained by changing N2 flow rate from 2 L/min to zero in Ar/H2/N2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiNx and an innermost layer of amorphous SiNx. The CGed SiNx-SiC film, in which SiNx acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H2 to Ar/H2/N2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiNx films.
AB - Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H2/N2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiNx films were produced from Ar/H2 and Ar/H2/N2 thermal plasma, respectively. The CGed SiC-SiNx film was obtained by changing N2 flow rate from 2 L/min to zero in Ar/H2/N2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiNx and an innermost layer of amorphous SiNx. The CGed SiNx-SiC film, in which SiNx acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H2 to Ar/H2/N2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiNx films.
KW - Field emission
KW - Liquid alkoxide precursor
KW - Plasma CVD
KW - SiCN film
UR - http://www.scopus.com/inward/record.url?scp=33748807801&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33748807801&partnerID=8YFLogxK
U2 - 10.1016/j.diamond.2006.03.003
DO - 10.1016/j.diamond.2006.03.003
M3 - Article
AN - SCOPUS:33748807801
VL - 15
SP - 1727
EP - 1731
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 10
ER -