Mechanical and field emission properties of CGed Si(C,N) films synthesized by PECVD from HMDS precursor

Y. S. Li, H. Kiyono, S. Shimada, X. Lu, A. Hirose

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Compositionally graded (CGed) Si(C,N) films were prepared by Ar/H2/N2 plasma enhanced chemical vapor deposition from liquid injected hexamethyldisiloxane precursor. The films were characterized by scanning/transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Monolithic crystalline SiC and amorphous SiNx films were produced from Ar/H2 and Ar/H2/N2 thermal plasma, respectively. The CGed SiC-SiNx film was obtained by changing N2 flow rate from 2 L/min to zero in Ar/H2/N2 during the deposition process, and it was composed of an uppermost crystalline SiC layer, a thin intermediate layer containing nanocomposite c-SiC/a-SiNx and an innermost layer of amorphous SiNx. The CGed SiNx-SiC film, in which SiNx acts as a top layer with a SiC layer underneath, was fabricated by an inverse change of the plasma gas supply from initial Ar/H2 to Ar/H2/N2. Microhardness increase and promising field emission properties were obtained from these CGed films in comparison with monolithic SiC and SiNx films.

Original languageEnglish
Pages (from-to)1727-1731
Number of pages5
JournalDiamond and Related Materials
Volume15
Issue number10
DOIs
Publication statusPublished - 2006 Oct 1

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Keywords

  • Field emission
  • Liquid alkoxide precursor
  • Plasma CVD
  • SiCN film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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