Mechanical properties of the GaN thin films deposited on sapphire substrate

G. Yu, Hiroyasu Ishikawa, T. Egawa, T. Soga, J. Watanabe, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

The surface deformation of undoped GaN epitaxial layer on sapphire(0 0 0 1) substrate has been studied by the nanoindentation of pointed diamond (Berkovich triangular pyramid) and spherically tipped diamond of 5 μm radius. We found a "pop-in" under the load portion of load-displacement curves for all the samples, and that average shear stress is dependent on the film thickness. We further calculated "true-hardness" of GaN on sapphire(0 0 0 1) substrate, and compared with the results of InGaN on sapphire.

Original languageEnglish
Pages (from-to)701-705
Number of pages5
JournalJournal of Crystal Growth
Volume189-190
Publication statusPublished - 1998 Jun 15
Externally publishedYes

Fingerprint

Aluminum Oxide
Sapphire
sapphire
Diamond
mechanical properties
Thin films
Mechanical properties
Diamonds
Substrates
thin films
diamonds
Epitaxial layers
Nanoindentation
nanoindentation
pyramids
shear stress
Film thickness
Shear stress
film thickness
hardness

Keywords

  • GaN
  • Hardness
  • Nanoindentation
  • Shear stress

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Yu, G., Ishikawa, H., Egawa, T., Soga, T., Watanabe, J., Jimbo, T., & Umeno, M. (1998). Mechanical properties of the GaN thin films deposited on sapphire substrate. Journal of Crystal Growth, 189-190, 701-705.

Mechanical properties of the GaN thin films deposited on sapphire substrate. / Yu, G.; Ishikawa, Hiroyasu; Egawa, T.; Soga, T.; Watanabe, J.; Jimbo, T.; Umeno, M.

In: Journal of Crystal Growth, Vol. 189-190, 15.06.1998, p. 701-705.

Research output: Contribution to journalArticle

Yu, G, Ishikawa, H, Egawa, T, Soga, T, Watanabe, J, Jimbo, T & Umeno, M 1998, 'Mechanical properties of the GaN thin films deposited on sapphire substrate', Journal of Crystal Growth, vol. 189-190, pp. 701-705.
Yu G, Ishikawa H, Egawa T, Soga T, Watanabe J, Jimbo T et al. Mechanical properties of the GaN thin films deposited on sapphire substrate. Journal of Crystal Growth. 1998 Jun 15;189-190:701-705.
Yu, G. ; Ishikawa, Hiroyasu ; Egawa, T. ; Soga, T. ; Watanabe, J. ; Jimbo, T. ; Umeno, M. / Mechanical properties of the GaN thin films deposited on sapphire substrate. In: Journal of Crystal Growth. 1998 ; Vol. 189-190. pp. 701-705.
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