Mechanical properties of the GaN thin films deposited on sapphire substrate

G. Yu, H. Ishikawa, T. Egawa, T. Soga, J. Watanabe, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

The surface deformation of undoped GaN epitaxial layer on sapphire(0 0 0 1) substrate has been studied by the nanoindentation of pointed diamond (Berkovich triangular pyramid) and spherically tipped diamond of 5 μm radius. We found a "pop-in" under the load portion of load-displacement curves for all the samples, and that average shear stress is dependent on the film thickness. We further calculated "true-hardness" of GaN on sapphire(0 0 0 1) substrate, and compared with the results of InGaN on sapphire.

Original languageEnglish
Pages (from-to)701-705
Number of pages5
JournalJournal of Crystal Growth
Volume189-190
DOIs
Publication statusPublished - 1998 Jun 15
Externally publishedYes

Keywords

  • GaN
  • Hardness
  • Nanoindentation
  • Shear stress

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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