Mechanical properties of the GaN thin films deposited on sapphire substrate

G. Yu; H. Ishikawa; T. Egawa; T. Soga; J. Watanabe; T. Jimbo; M. Umeno

doi:10.1016/S0022-0248(98)00262-0

Mechanical properties of the GaN thin films deposited on sapphire substrate

G. Yu, H. Ishikawa, T. Egawa, T. Soga, J. Watanabe, T. Jimbo, M. Umeno

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

The surface deformation of undoped GaN epitaxial layer on sapphire(0 0 0 1) substrate has been studied by the nanoindentation of pointed diamond (Berkovich triangular pyramid) and spherically tipped diamond of 5 μm radius. We found a "pop-in" under the load portion of load-displacement curves for all the samples, and that average shear stress is dependent on the film thickness. We further calculated "true-hardness" of GaN on sapphire(0 0 0 1) substrate, and compared with the results of InGaN on sapphire.

Original language	English
Pages (from-to)	701-705
Number of pages	5
Journal	Journal of Crystal Growth
Volume	189-190
DOIs	https://doi.org/10.1016/S0022-0248(98)00262-0
Publication status	Published - 1998 Jun 15
Externally published	Yes

Keywords

GaN
Hardness
Nanoindentation
Shear stress

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(98)00262-0

Cite this

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T1 - Mechanical properties of the GaN thin films deposited on sapphire substrate

AU - Yu, G.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Soga, T.

AU - Watanabe, J.

AU - Jimbo, T.

AU - Umeno, M.

PY - 1998/6/15

Y1 - 1998/6/15

N2 - The surface deformation of undoped GaN epitaxial layer on sapphire(0 0 0 1) substrate has been studied by the nanoindentation of pointed diamond (Berkovich triangular pyramid) and spherically tipped diamond of 5 μm radius. We found a "pop-in" under the load portion of load-displacement curves for all the samples, and that average shear stress is dependent on the film thickness. We further calculated "true-hardness" of GaN on sapphire(0 0 0 1) substrate, and compared with the results of InGaN on sapphire.

AB - The surface deformation of undoped GaN epitaxial layer on sapphire(0 0 0 1) substrate has been studied by the nanoindentation of pointed diamond (Berkovich triangular pyramid) and spherically tipped diamond of 5 μm radius. We found a "pop-in" under the load portion of load-displacement curves for all the samples, and that average shear stress is dependent on the film thickness. We further calculated "true-hardness" of GaN on sapphire(0 0 0 1) substrate, and compared with the results of InGaN on sapphire.

KW - GaN

KW - Hardness

KW - Nanoindentation

KW - Shear stress

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JF - Journal of Crystal Growth

ER -

Mechanical properties of the GaN thin films deposited on sapphire substrate

Abstract

Keywords

ASJC Scopus subject areas

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