Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode

T. Nabatame, M. Kimura, H. Yamada, A. Ohi, Tomoji Ohishi, T. Chikyow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate Vfb behavior of (TaC) 1-xAl x gated HfO 2 MOS capacitors as a function of post metal annealing (PMA) temperature. The positive Vfb shift appears in PMA temperature at above 700°C, while the negative Vfb shift occurs at below 600°C. At below 600°C, the effective work function (φ m,eff) of gate electrode becomes lower by increasing Al atoms with a low work function. We found that the positive Vfb shift occurs dominantly due to the φ m,eff change induced by Al diffusion from gate electrode at 700 and 800°C. At above 900°C, Al atoms reach to the HfO 2/SiO 2 interface and form the AlO x layers, and results in positive Vfb shift due to the bottom interface dipole. We can divide into two components of φ m,eff change of gate electrode and the bottom interface dipole due to AlO x layer as a function of PMA temperature.

Original languageEnglish
Title of host publicationECS Transactions
Pages49-59
Number of pages11
Volume45
Edition3
DOIs
Publication statusPublished - 2012
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA
Duration: 2012 May 62012 May 10

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
CitySeattle, WA
Period12/5/612/5/10

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Annealing
Electrodes
Metals
MOS capacitors
Atoms
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Nabatame, T., Kimura, M., Yamada, H., Ohi, A., Ohishi, T., & Chikyow, T. (2012). Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode. In ECS Transactions (3 ed., Vol. 45, pp. 49-59) https://doi.org/10.1149/1.3700871

Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode. / Nabatame, T.; Kimura, M.; Yamada, H.; Ohi, A.; Ohishi, Tomoji; Chikyow, T.

ECS Transactions. Vol. 45 3. ed. 2012. p. 49-59.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nabatame, T, Kimura, M, Yamada, H, Ohi, A, Ohishi, T & Chikyow, T 2012, Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode. in ECS Transactions. 3 edn, vol. 45, pp. 49-59, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, 12/5/6. https://doi.org/10.1149/1.3700871
Nabatame T, Kimura M, Yamada H, Ohi A, Ohishi T, Chikyow T. Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode. In ECS Transactions. 3 ed. Vol. 45. 2012. p. 49-59 https://doi.org/10.1149/1.3700871
Nabatame, T. ; Kimura, M. ; Yamada, H. ; Ohi, A. ; Ohishi, Tomoji ; Chikyow, T. / Mechanism of Vfb shift in HfO 2 gate stack by Al diffusion from (TaC) 1-xAl x gate electrode. ECS Transactions. Vol. 45 3. ed. 2012. pp. 49-59
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