Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

T.Nabatame T.Nabatame, M.Kimura M.Kimura, H.Yamada H.Yamada, A.Ohi A.Ohi, T.Ohishi T.Ohishi, T.Chikyow T.Chikyow, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
Journal221st Electro Chemical Society Meeting, Seattle (USA)
Publication statusPublished - 2012 May 6

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T.Nabatame, T. N., M.Kimura, M. K., H.Yamada, H. Y., A.Ohi, A. O., T.Ohishi, T. O., T.Chikyow, T. C., & Oishi, T. (2012). Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode. 221st Electro Chemical Society Meeting, Seattle (USA).