Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

T.Nabatame T.Nabatame, M.Kimura M.Kimura, H.Yamada H.Yamada, A.Ohi A.Ohi, T.Ohishi T.Ohishi, T.Chikyow T.Chikyow, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
Journal221st Electro Chemical Society Meeting, Seattle (USA)
Publication statusPublished - 2012 May 6

Cite this

T.Nabatame, T. N., M.Kimura, M. K., H.Yamada, H. Y., A.Ohi, A. O., T.Ohishi, T. O., T.Chikyow, T. C., & Oishi, T. (2012). Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode. 221st Electro Chemical Society Meeting, Seattle (USA).

Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode. / T.Nabatame, T.Nabatame; M.Kimura, M.Kimura; H.Yamada, H.Yamada; A.Ohi, A.Ohi; T.Ohishi, T.Ohishi; T.Chikyow, T.Chikyow; Oishi, Tomoji.

In: 221st Electro Chemical Society Meeting, Seattle (USA), 06.05.2012.

Research output: Contribution to journalArticle

T.Nabatame TN, M.Kimura MK, H.Yamada HY, A.Ohi AO, T.Ohishi TO, T.Chikyow TC et al. Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode. 221st Electro Chemical Society Meeting, Seattle (USA). 2012 May 6.
T.Nabatame, T.Nabatame ; M.Kimura, M.Kimura ; H.Yamada, H.Yamada ; A.Ohi, A.Ohi ; T.Ohishi, T.Ohishi ; T.Chikyow, T.Chikyow ; Oishi, Tomoji. / Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode. In: 221st Electro Chemical Society Meeting, Seattle (USA). 2012.
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AU - H.Yamada, H.Yamada

AU - A.Ohi, A.Ohi

AU - T.Ohishi, T.Ohishi

AU - T.Chikyow, T.Chikyow

AU - Oishi, Tomoji

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