Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

T.Nabatame T.Nabatame; M.Kimura M.Kimura; H.Yamada H.Yamada; A.Ohi A.Ohi; T.Ohishi T.Ohishi; T.Chikyow T.Chikyow; Tomoji Oishi

Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

T.Nabatame T.Nabatame, M.Kimura M.Kimura, H.Yamada H.Yamada, A.Ohi A.Ohi, T.Ohishi T.Ohishi, T.Chikyow T.Chikyow, Tomoji Oishi

Regional Environment Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	221st Electro Chemical Society Meeting, Seattle (USA)
Publication status	Published - 2012 May 6

Cite this

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title = "Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode",

author = "T.Nabatame T.Nabatame and M.Kimura M.Kimura and H.Yamada H.Yamada and A.Ohi A.Ohi and T.Ohishi T.Ohishi and T.Chikyow T.Chikyow and Tomoji Oishi",

year = "2012",

month = may,

day = "6",

language = "English",

journal = "221st Electro Chemical Society Meeting, Seattle (USA)",

}

TY - JOUR

T1 - Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode

AU - T.Nabatame, T.Nabatame

AU - M.Kimura, M.Kimura

AU - H.Yamada, H.Yamada

AU - A.Ohi, A.Ohi

AU - T.Ohishi, T.Ohishi

AU - T.Chikyow, T.Chikyow

AU - Oishi, Tomoji

PY - 2012/5/6

Y1 - 2012/5/6

M3 - Article

JO - 221st Electro Chemical Society Meeting, Seattle (USA)

JF - 221st Electro Chemical Society Meeting, Seattle (USA)

ER -