Abstract
Moisture absorption is a big problem of lanthanum oxide (La 2O3) as a high permittivity (k) gate dielectric which can degrade properties of La2O3 films. In this study, two possible mechanisms have been proposed. One is oxygen vacancies in La 2O3. The other is the intrinsic reaction between La 2O3 and H2O due to the small lattice energy of La2O3. To suppress these two reactions of H2O with La2O3, two solutions have been proposed respectively. One is the ultraviolet (UV) ozone post treatment to suppress the moisture absorption through healing the oxygen vacancies in La2O3 films. Our experiment results show that UV ozone treatment can suppress the moisture absorption of La2O3 film. The other solution is to dope a larger lattice energy oxide into La2O3 to suppress the intrinsic moisture absorption reaction. We have demonstrated experimentally that the Y2O3 doping (LaYOx) films show much stronger moisture resistance than La2O3 film.
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions |
| Pages | 141-148 |
| Number of pages | 8 |
| Volume | 6 |
| Edition | 1 |
| DOIs | |
| Publication status | Published - 2007 |
| Externally published | Yes |
| Event | International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting - Chicago, IL Duration: 2007 May 6 → 2007 May 10 |
Other
| Other | International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting |
|---|---|
| City | Chicago, IL |
| Period | 07/5/6 → 07/5/10 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric. / Zhao, Yi; Kita, Koji; Kyuno, Kentaro; Toriumi, Akira.
ECS Transactions. Vol. 6 1. ed. 2007. p. 141-148.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric
AU - Zhao, Yi
AU - Kita, Koji
AU - Kyuno, Kentaro
AU - Toriumi, Akira
PY - 2007
Y1 - 2007
N2 - Moisture absorption is a big problem of lanthanum oxide (La 2O3) as a high permittivity (k) gate dielectric which can degrade properties of La2O3 films. In this study, two possible mechanisms have been proposed. One is oxygen vacancies in La 2O3. The other is the intrinsic reaction between La 2O3 and H2O due to the small lattice energy of La2O3. To suppress these two reactions of H2O with La2O3, two solutions have been proposed respectively. One is the ultraviolet (UV) ozone post treatment to suppress the moisture absorption through healing the oxygen vacancies in La2O3 films. Our experiment results show that UV ozone treatment can suppress the moisture absorption of La2O3 film. The other solution is to dope a larger lattice energy oxide into La2O3 to suppress the intrinsic moisture absorption reaction. We have demonstrated experimentally that the Y2O3 doping (LaYOx) films show much stronger moisture resistance than La2O3 film.
AB - Moisture absorption is a big problem of lanthanum oxide (La 2O3) as a high permittivity (k) gate dielectric which can degrade properties of La2O3 films. In this study, two possible mechanisms have been proposed. One is oxygen vacancies in La 2O3. The other is the intrinsic reaction between La 2O3 and H2O due to the small lattice energy of La2O3. To suppress these two reactions of H2O with La2O3, two solutions have been proposed respectively. One is the ultraviolet (UV) ozone post treatment to suppress the moisture absorption through healing the oxygen vacancies in La2O3 films. Our experiment results show that UV ozone treatment can suppress the moisture absorption of La2O3 film. The other solution is to dope a larger lattice energy oxide into La2O3 to suppress the intrinsic moisture absorption reaction. We have demonstrated experimentally that the Y2O3 doping (LaYOx) films show much stronger moisture resistance than La2O3 film.
UR - http://www.scopus.com/inward/record.url?scp=45849143686&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=45849143686&partnerID=8YFLogxK
U2 - 10.1149/1.2727397
DO - 10.1149/1.2727397
M3 - Conference contribution
AN - SCOPUS:45849143686
SN - 9781566775502
VL - 6
SP - 141
EP - 148
BT - ECS Transactions
ER -