Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric

Yi Zhao; Koji Kita; Kentaro Kyuno; Akira Toriumi

doi:10.1149/1.2727397

Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Moisture absorption is a big problem of lanthanum oxide (La ₂O₃) as a high permittivity (k) gate dielectric which can degrade properties of La₂O₃ films. In this study, two possible mechanisms have been proposed. One is oxygen vacancies in La ₂O₃. The other is the intrinsic reaction between La ₂O₃ and H₂O due to the small lattice energy of La₂O₃. To suppress these two reactions of H₂O with La₂O₃, two solutions have been proposed respectively. One is the ultraviolet (UV) ozone post treatment to suppress the moisture absorption through healing the oxygen vacancies in La₂O₃ films. Our experiment results show that UV ozone treatment can suppress the moisture absorption of La₂O₃ film. The other solution is to dope a larger lattice energy oxide into La₂O₃ to suppress the intrinsic moisture absorption reaction. We have demonstrated experimentally that the Y₂O₃ doping (LaYO_x) films show much stronger moisture resistance than La₂O₃ film.

Original language	English
Title of host publication	ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS
Subtitle of host publication	New Materials, Processes and Equipment, 3
Pages	141-148
Number of pages	8
Edition	1
DOIs	https://doi.org/10.1149/1.2727397
Publication status	Published - 2007 Dec 1
Event	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting - Chicago, IL, United States Duration: 2007 May 6 → 2007 May 10

Publication series

Name	ECS Transactions
Number	1
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting
Country	United States
City	Chicago, IL
Period	07/5/6 → 07/5/10

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2727397

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Zhao, Y., Kita, K., Kyuno, K., & Toriumi, A. (2007). Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric. In ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 (1 ed., pp. 141-148). (ECS Transactions; Vol. 6, No. 1). https://doi.org/10.1149/1.2727397

Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric. / Zhao, Yi; Kita, Koji; Kyuno, Kentaro; Toriumi, Akira.

ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1. ed. 2007. p. 141-148 (ECS Transactions; Vol. 6, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, Y, Kita, K, Kyuno, K & Toriumi, A 2007, Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric. in ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 edn, ECS Transactions, no. 1, vol. 6, pp. 141-148, International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting, Chicago, IL, United States, 07/5/6. https://doi.org/10.1149/1.2727397

Zhao Y, Kita K, Kyuno K, Toriumi A. Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric. In ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1 ed. 2007. p. 141-148. (ECS Transactions; 1). https://doi.org/10.1149/1.2727397

Zhao, Yi ; Kita, Koji ; Kyuno, Kentaro ; Toriumi, Akira. / Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric. ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3. 1. ed. 2007. pp. 141-148 (ECS Transactions; 1).

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abstract = "Moisture absorption is a big problem of lanthanum oxide (La 2O3) as a high permittivity (k) gate dielectric which can degrade properties of La2O3 films. In this study, two possible mechanisms have been proposed. One is oxygen vacancies in La 2O3. The other is the intrinsic reaction between La 2O3 and H2O due to the small lattice energy of La2O3. To suppress these two reactions of H2O with La2O3, two solutions have been proposed respectively. One is the ultraviolet (UV) ozone post treatment to suppress the moisture absorption through healing the oxygen vacancies in La2O3 films. Our experiment results show that UV ozone treatment can suppress the moisture absorption of La2O3 film. The other solution is to dope a larger lattice energy oxide into La2O3 to suppress the intrinsic moisture absorption reaction. We have demonstrated experimentally that the Y2O3 doping (LaYOx) films show much stronger moisture resistance than La2O3 film.",

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