Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric

Yi Zhao, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Moisture absorption is a big problem of lanthanum oxide (La 2O3) as a high permittivity (k) gate dielectric which can degrade properties of La2O3 films. In this study, two possible mechanisms have been proposed. One is oxygen vacancies in La 2O3. The other is the intrinsic reaction between La 2O3 and H2O due to the small lattice energy of La2O3. To suppress these two reactions of H2O with La2O3, two solutions have been proposed respectively. One is the ultraviolet (UV) ozone post treatment to suppress the moisture absorption through healing the oxygen vacancies in La2O3 films. Our experiment results show that UV ozone treatment can suppress the moisture absorption of La2O3 film. The other solution is to dope a larger lattice energy oxide into La2O3 to suppress the intrinsic moisture absorption reaction. We have demonstrated experimentally that the Y2O3 doping (LaYOx) films show much stronger moisture resistance than La2O3 film.

Original languageEnglish
Title of host publicationECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS
Subtitle of host publicationNew Materials, Processes and Equipment, 3
Pages141-148
Number of pages8
Edition1
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
EventInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting - Chicago, IL, United States
Duration: 2007 May 62007 May 10

Publication series

NameECS Transactions
Number1
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period07/5/607/5/10

ASJC Scopus subject areas

  • Engineering(all)

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    Zhao, Y., Kita, K., Kyuno, K., & Toriumi, A. (2007). Mechanisms of and solutions to moisture absorption of lanthanum oxide as high k gate dielectric. In ECS Transactions - International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 3 (1 ed., pp. 141-148). (ECS Transactions; Vol. 6, No. 1). https://doi.org/10.1149/1.2727397