Micro fabrication development of a vibration-based sputtered PZT thin film micro energy harvester

K. Shibata, S. Ishikawa, K. Tanaka, S. Nagasawa, Z. Cao, H. Oguchi, M. Hara, H. Kuwano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We developed a micro fabrication process of vibration-based sputtered PZT micro energy harvester with a proof mass. A PZT film as a piezoelectric material is formed on a cantilever by using sputtering. An electric power is generated because of piezoelectric effect when the cantilever is bended and stressed. The device is fabricated on a Si substrate by MEMS techniques. The cantilever had 1200 μm in length, 600 μm in width, and 50 μm in thickness on the Si substrate. Also, a PZT thin film free standing cantilever was successfully fabricated. A proof mass with 0.42 mg in weight was fabricated on both top of Si substrate cantilever and PZT thin film free standing cantilever. Dynamic and static frequency characteristics and output power generation were experimented by using a shaker and a network analyzer for characterizing the device. The resonant frequency of the Si cantilever was 8.81 kHz. We achieved 418 pW output power at the resonant frequency.

Original languageEnglish
Title of host publicationIEEE SENSORS 2012 - Proceedings
DOIs
Publication statusPublished - 2012 Dec 1
Event11th IEEE SENSORS 2012 Conference - Taipei, Taiwan, Province of China
Duration: 2012 Oct 282012 Oct 31

Publication series

NameProceedings of IEEE Sensors

Conference

Conference11th IEEE SENSORS 2012 Conference
CountryTaiwan, Province of China
CityTaipei
Period12/10/2812/10/31

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Shibata, K., Ishikawa, S., Tanaka, K., Nagasawa, S., Cao, Z., Oguchi, H., Hara, M., & Kuwano, H. (2012). Micro fabrication development of a vibration-based sputtered PZT thin film micro energy harvester. In IEEE SENSORS 2012 - Proceedings [6411532] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2012.6411532