Micro-pattering of siloxane films by proton beam writing

Hiroyuki Nishikawa; Ryutaro Tsuchiya; Tetsuro Yasukawa; Tomoki Kaneko; Yusuke Furuta; Tomoji Ohishi

doi:10.2494/photopolymer.22.239

Micro-pattering of siloxane films by proton beam writing

Hiroyuki Nishikawa, Ryutaro Tsuchiya, Tetsuro Yasukawa, Tomoki Kaneko, Yusuke Furuta, Tomoji Ohishi

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Micropatterning of two types of siloxane films, HSQ and SOG was studied by 1.0 MeV focused proton beam. FT-IR measurements show the transformation of the Si-O-Si structures in siloxane to networked structures after proton beam writing. Both the HSQ and SOG are negative resist for 1.0 MeV proton beam. Lines with smooth sidewalls were written by proton beam writing for both HSQ and SOG. Vertical sidewall is observed for HSQ, while it is tapered for SOG.

Original language	English
Pages (from-to)	239-243
Number of pages	5
Journal	Journal of Photopolymer Science and Technology
Volume	22
Issue number	2
DOIs	https://doi.org/10.2494/photopolymer.22.239
Publication status	Published - 2009

Keywords

HSQ
Proton beam writing
SOG
Siloxane

ASJC Scopus subject areas

Polymers and Plastics
Organic Chemistry
Materials Chemistry

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10.2494/photopolymer.22.239

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title = "Micro-pattering of siloxane films by proton beam writing",

abstract = "Micropatterning of two types of siloxane films, HSQ and SOG was studied by 1.0 MeV focused proton beam. FT-IR measurements show the transformation of the Si-O-Si structures in siloxane to networked structures after proton beam writing. Both the HSQ and SOG are negative resist for 1.0 MeV proton beam. Lines with smooth sidewalls were written by proton beam writing for both HSQ and SOG. Vertical sidewall is observed for HSQ, while it is tapered for SOG.",

keywords = "HSQ, Proton beam writing, SOG, Siloxane",

author = "Hiroyuki Nishikawa and Ryutaro Tsuchiya and Tetsuro Yasukawa and Tomoki Kaneko and Yusuke Furuta and Tomoji Ohishi",

year = "2009",

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T1 - Micro-pattering of siloxane films by proton beam writing

AU - Nishikawa, Hiroyuki

AU - Tsuchiya, Ryutaro

AU - Yasukawa, Tetsuro

AU - Kaneko, Tomoki

AU - Furuta, Yusuke

AU - Ohishi, Tomoji

PY - 2009

Y1 - 2009

N2 - Micropatterning of two types of siloxane films, HSQ and SOG was studied by 1.0 MeV focused proton beam. FT-IR measurements show the transformation of the Si-O-Si structures in siloxane to networked structures after proton beam writing. Both the HSQ and SOG are negative resist for 1.0 MeV proton beam. Lines with smooth sidewalls were written by proton beam writing for both HSQ and SOG. Vertical sidewall is observed for HSQ, while it is tapered for SOG.

AB - Micropatterning of two types of siloxane films, HSQ and SOG was studied by 1.0 MeV focused proton beam. FT-IR measurements show the transformation of the Si-O-Si structures in siloxane to networked structures after proton beam writing. Both the HSQ and SOG are negative resist for 1.0 MeV proton beam. Lines with smooth sidewalls were written by proton beam writing for both HSQ and SOG. Vertical sidewall is observed for HSQ, while it is tapered for SOG.

KW - HSQ

KW - Proton beam writing

KW - SOG

KW - Siloxane

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ER -

Micro-pattering of siloxane films by proton beam writing

Abstract

Keywords

ASJC Scopus subject areas

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