| Original language | English |
|---|---|
| Pages (from-to) | Th-P48 |
| Journal | Default journal |
| Publication status | Published - 1998 Sep 1 |
Cite this
Hayashi, Y., Ishikawa, H., Egawa, T., Soga, T., Jimbo, T., & .Umeno, M. (1998). Micro-Raman Scattering Study of Internal Strain Relaxation in Post-Growth Patterned GaN Film Grown on Sapphire Substrate. Default journal, Th-P48.
Micro-Raman Scattering Study of Internal Strain Relaxation in Post-Growth Patterned GaN Film Grown on Sapphire Substrate. / Hayashi, Y.; Ishikawa, H.; Egawa, T.; Soga, T.; Jimbo, T.; .Umeno, M.
In: Default journal, 01.09.1998, p. Th-P48.Research output: Contribution to journal › Article
Hayashi, Y, Ishikawa, H, Egawa, T, Soga, T, Jimbo, T & .Umeno, M 1998, 'Micro-Raman Scattering Study of Internal Strain Relaxation in Post-Growth Patterned GaN Film Grown on Sapphire Substrate', Default journal, pp. Th-P48.
Hayashi Y, Ishikawa H, Egawa T, Soga T, Jimbo T, .Umeno M. Micro-Raman Scattering Study of Internal Strain Relaxation in Post-Growth Patterned GaN Film Grown on Sapphire Substrate. Default journal. 1998 Sep 1;Th-P48.
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AU - Soga, T.
AU - Jimbo, T.
AU - .Umeno, M
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