Microwave and millimeter-wave high efficiency power HBT

Norio Goto; Hidenori Shimawaki; Yasushi Amamiya; Naoki Furuhata; Chang Woo Kim; Shin'ichi Tanaka; Kazuhiko Honjo

Microwave and millimeter-wave high efficiency power HBT

Norio Goto, Hidenori Shimawaki, Yasushi Amamiya, Naoki Furuhata, Chang Woo Kim, Shin'ichi Tanaka, Kazuhiko Honjo

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (f_max), and collector efficiency. HBT device structure having p⁺/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve f_max. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.

Original language	English
Title of host publication	NEC Research and Development
Pages	139-146
Number of pages	8
Volume	36
Edition	1
Publication status	Published - 1995 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Microwave and millimeter-wave high efficiency power HBT",

abstract = "This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (fmax), and collector efficiency. HBT device structure having p+/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve fmax. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.",

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AU - Goto, Norio

AU - Shimawaki, Hidenori

AU - Amamiya, Yasushi

AU - Furuhata, Naoki

AU - Kim, Chang Woo

AU - Tanaka, Shin'ichi

AU - Honjo, Kazuhiko

PY - 1995/1/1

Y1 - 1995/1/1

N2 - This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (fmax), and collector efficiency. HBT device structure having p+/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve fmax. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.

AB - This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (fmax), and collector efficiency. HBT device structure having p+/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve fmax. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.

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Microwave and millimeter-wave high efficiency power HBT

Abstract

ASJC Scopus subject areas

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