Microwave and millimeter-wave high efficiency power HBT

Norio Goto, Hidenori Shimawaki, Yasushi Amamiya, Naoki Furuhata, Chang Woo Kim, Shin'ichi Tanaka, Kazuhiko Honjo

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This paper describes AlGaAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technologies applicable to power amplifiers for microwave and millimeter-wave frequencies. The performance of the power amplifier is characterized using power added efficiency, which is the function of maximum available gain cutoff frequency (fmax), and collector efficiency. HBT device structure having p+/p regrown extrinsic base, compositionally graded intrinsic base, and hetero guard ring composed of depleted AlGaAs, are shown as technologies to improve fmax. Novel class F matching circuit including harmonic trapping are also shown as a technology to increase collector efficiency. RF power performances of 25.6 dBm (365 mW) saturation power and 23% power added efficiency were obtained at 25.2 GHz.

Original languageEnglish
Title of host publicationNEC Research and Development
Pages139-146
Number of pages8
Volume36
Edition1
Publication statusPublished - 1995 Jan 1

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Goto, N., Shimawaki, H., Amamiya, Y., Furuhata, N., Kim, C. W., Tanaka, S., & Honjo, K. (1995). Microwave and millimeter-wave high efficiency power HBT. In NEC Research and Development (1 ed., Vol. 36, pp. 139-146)