Microwave irradiation on a-axis oriented Y123/Pr123 two-stacked Josephson junctions device

S. Saini; P. Mele; M. Mukaida; S. J. Kim

doi:10.1016/j.cap.2015.01.021

Microwave irradiation on a-axis oriented Y123/Pr123 two-stacked Josephson junctions device

S. Saini, P. Mele, M. Mukaida, S. J. Kim

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Two-stacked submicron Josephson junctions devices were fabricated in a-axis oriented YBaCu₃O₇ and PrBa₂Cu₃O₇ (Y123/Pr123) multi layered thin films using focused ion beam milling technique. The transition temperature and critical current density (J_c) of the device are about 83 K and 5 × 10⁵ A/cm² at 20 K, respectively. The device was irradiated with external microwave of 10 GHz and studied at 20 K. The microwave induced voltage steps are observed in I-V characteristics. The supercurrent branch become resistive above a certain microwave power and also the J_c was suppressed as we increased the microwave power. Magnetic field modulation of critical current shows periodicity of about 2000 gauss correspond to the Josephson junctions in the stack.

Original language	English
Pages (from-to)	569-573
Number of pages	5
Journal	Current Applied Physics
Volume	15
Issue number	5
DOIs	https://doi.org/10.1016/j.cap.2015.01.021
Publication status	Published - 2015 May
Externally published	Yes

Keywords

Focused ion beam
Josephson junctions
Microwave irradiation
Multi-layered thin films
PrBaCuO thin films
Pulse laser deposition
Two-stacked device
YBaCuO thin films

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2015.01.021

Cite this

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title = "Microwave irradiation on a-axis oriented Y123/Pr123 two-stacked Josephson junctions device",

abstract = "Two-stacked submicron Josephson junctions devices were fabricated in a-axis oriented YBaCu3O7 and PrBa2Cu3O7 (Y123/Pr123) multi layered thin films using focused ion beam milling technique. The transition temperature and critical current density (Jc) of the device are about 83 K and 5 × 105 A/cm2 at 20 K, respectively. The device was irradiated with external microwave of 10 GHz and studied at 20 K. The microwave induced voltage steps are observed in I-V characteristics. The supercurrent branch become resistive above a certain microwave power and also the Jc was suppressed as we increased the microwave power. Magnetic field modulation of critical current shows periodicity of about 2000 gauss correspond to the Josephson junctions in the stack.",

keywords = "Focused ion beam, Josephson junctions, Microwave irradiation, Multi-layered thin films, PrBaCuO thin films, Pulse laser deposition, Two-stacked device, YBaCuO thin films",

author = "S. Saini and P. Mele and M. Mukaida and Kim, {S. J.}",

year = "2015",

month = may,

doi = "10.1016/j.cap.2015.01.021",

language = "English",

volume = "15",

pages = "569--573",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "5",

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T1 - Microwave irradiation on a-axis oriented Y123/Pr123 two-stacked Josephson junctions device

AU - Saini, S.

AU - Mele, P.

AU - Mukaida, M.

AU - Kim, S. J.

PY - 2015/5

Y1 - 2015/5

N2 - Two-stacked submicron Josephson junctions devices were fabricated in a-axis oriented YBaCu3O7 and PrBa2Cu3O7 (Y123/Pr123) multi layered thin films using focused ion beam milling technique. The transition temperature and critical current density (Jc) of the device are about 83 K and 5 × 105 A/cm2 at 20 K, respectively. The device was irradiated with external microwave of 10 GHz and studied at 20 K. The microwave induced voltage steps are observed in I-V characteristics. The supercurrent branch become resistive above a certain microwave power and also the Jc was suppressed as we increased the microwave power. Magnetic field modulation of critical current shows periodicity of about 2000 gauss correspond to the Josephson junctions in the stack.

AB - Two-stacked submicron Josephson junctions devices were fabricated in a-axis oriented YBaCu3O7 and PrBa2Cu3O7 (Y123/Pr123) multi layered thin films using focused ion beam milling technique. The transition temperature and critical current density (Jc) of the device are about 83 K and 5 × 105 A/cm2 at 20 K, respectively. The device was irradiated with external microwave of 10 GHz and studied at 20 K. The microwave induced voltage steps are observed in I-V characteristics. The supercurrent branch become resistive above a certain microwave power and also the Jc was suppressed as we increased the microwave power. Magnetic field modulation of critical current shows periodicity of about 2000 gauss correspond to the Josephson junctions in the stack.

KW - Focused ion beam

KW - Josephson junctions

KW - Microwave irradiation

KW - Multi-layered thin films

KW - PrBaCuO thin films

KW - Pulse laser deposition

KW - Two-stacked device

KW - YBaCuO thin films

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DO - 10.1016/j.cap.2015.01.021

M3 - Article

AN - SCOPUS:84923095499

SN - 1567-1739

VL - 15

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JO - Current Applied Physics

JF - Current Applied Physics

IS - 5

ER -

Microwave irradiation on a-axis oriented Y123/Pr123 two-stacked Josephson junctions device

Abstract

Keywords

ASJC Scopus subject areas

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