Microwave low-noise GaAs HBTs

H. Dodo; Y. Amamiya; T. Niwa; M. Mamada; S. Tanaka; H. Shimawaki

Microwave low-noise GaAs HBTs

H. Dodo, Y. Amamiya, T. Niwa, M. Mamada, S. Tanaka, H. Shimawaki

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper we present our approach to improving microwave noise performance of HBTs. A minimum noise figure of 0.83 dB was obtained at 2 GHz by using an emitter guarding structure which improves the DC current gain particularly at low current densities. We also fabricated HBTs with regrown extrinsic base layers and InGaAs graded base layers which drastically reduce base contact resistance and base transit time, respectively. It is shown that this type of HBTs not only improve the noise-figure at X-band or Ku-band but also make the noise impedance matching easier.

Original language	English
Pages (from-to)	693-696
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	2
Publication status	Published - 1998 Jan 1
Event	Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA Duration: 1998 Jun 7 → 1998 Jun 12

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Microwave low-noise GaAs HBTs",

abstract = "In this paper we present our approach to improving microwave noise performance of HBTs. A minimum noise figure of 0.83 dB was obtained at 2 GHz by using an emitter guarding structure which improves the DC current gain particularly at low current densities. We also fabricated HBTs with regrown extrinsic base layers and InGaAs graded base layers which drastically reduce base contact resistance and base transit time, respectively. It is shown that this type of HBTs not only improve the noise-figure at X-band or Ku-band but also make the noise impedance matching easier.",

author = "H. Dodo and Y. Amamiya and T. Niwa and M. Mamada and S. Tanaka and H. Shimawaki",

year = "1998",

month = jan,

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language = "English",

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pages = "693--696",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) ; Conference date: 07-06-1998 Through 12-06-1998",

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TY - JOUR

T1 - Microwave low-noise GaAs HBTs

AU - Dodo, H.

AU - Amamiya, Y.

AU - Niwa, T.

AU - Mamada, M.

AU - Tanaka, S.

AU - Shimawaki, H.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - In this paper we present our approach to improving microwave noise performance of HBTs. A minimum noise figure of 0.83 dB was obtained at 2 GHz by using an emitter guarding structure which improves the DC current gain particularly at low current densities. We also fabricated HBTs with regrown extrinsic base layers and InGaAs graded base layers which drastically reduce base contact resistance and base transit time, respectively. It is shown that this type of HBTs not only improve the noise-figure at X-band or Ku-band but also make the noise impedance matching easier.

AB - In this paper we present our approach to improving microwave noise performance of HBTs. A minimum noise figure of 0.83 dB was obtained at 2 GHz by using an emitter guarding structure which improves the DC current gain particularly at low current densities. We also fabricated HBTs with regrown extrinsic base layers and InGaAs graded base layers which drastically reduce base contact resistance and base transit time, respectively. It is shown that this type of HBTs not only improve the noise-figure at X-band or Ku-band but also make the noise impedance matching easier.

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UR - http://www.scopus.com/inward/citedby.url?scp=0031625414&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031625414

VL - 2

SP - 693

EP - 696

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

T2 - Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)

Y2 - 7 June 1998 through 12 June 1998

ER -

Microwave low-noise GaAs HBTs

Abstract

ASJC Scopus subject areas

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