Microwave low-noise GaAs HBTs

H. Dodo, Y. Amamiya, T. Niwa, M. Mamada, Shinichi Tanaka, H. Shimawaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)


In this paper we present our approach to improving microwave noise performance of HBTs. A minimum noise figure of 0.83 dB was obtained at 2 GHz by using an emitter guarding structure which improves the DC current gain particularly at low current densities. We also fabricated HBTs with regrown extrinsic base layers and InGaAs graded base layers which drastically reduce base contact resistance and base transit time, respectively. It is shown that this type of HBTs not only improve the noise-figure at X-band or Ku-band but also make the noise impedance matching easier.

Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
EditorsR. Meixner
Number of pages4
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA
Duration: 1998 Jun 71998 Jun 12


OtherProceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3)
CityBaltimore, MD, USA


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Dodo, H., Amamiya, Y., Niwa, T., Mamada, M., Tanaka, S., & Shimawaki, H. (1998). Microwave low-noise GaAs HBTs. In R. Meixner (Ed.), IEEE MTT-S International Microwave Symposium Digest (Vol. 2, pp. 693-696). IEEE.