Abstract
In this paper we present our approach to improving microwave noise performance of HBTs. A minimum noise figure of 0.83 dB was obtained at 2 GHz by using an emitter guarding structure which improves the DC current gain particularly at low current densities. We also fabricated HBTs with regrown extrinsic base layers and InGaAs graded base layers which drastically reduce base contact resistance and base transit time, respectively. It is shown that this type of HBTs not only improve the noise-figure at X-band or Ku-band but also make the noise impedance matching easier.
| Original language | English |
|---|---|
| Title of host publication | IEEE MTT-S International Microwave Symposium Digest |
| Editors | R. Meixner |
| Publisher | IEEE |
| Pages | 693-696 |
| Number of pages | 4 |
| Volume | 2 |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA Duration: 1998 Jun 7 → 1998 Jun 12 |
Other
| Other | Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) |
|---|---|
| City | Baltimore, MD, USA |
| Period | 98/6/7 → 98/6/12 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Microwave low-noise GaAs HBTs. / Dodo, H.; Amamiya, Y.; Niwa, T.; Mamada, M.; Tanaka, Shinichi; Shimawaki, H.
IEEE MTT-S International Microwave Symposium Digest. ed. / R. Meixner. Vol. 2 IEEE, 1998. p. 693-696.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Microwave low-noise GaAs HBTs
AU - Dodo, H.
AU - Amamiya, Y.
AU - Niwa, T.
AU - Mamada, M.
AU - Tanaka, Shinichi
AU - Shimawaki, H.
PY - 1998
Y1 - 1998
N2 - In this paper we present our approach to improving microwave noise performance of HBTs. A minimum noise figure of 0.83 dB was obtained at 2 GHz by using an emitter guarding structure which improves the DC current gain particularly at low current densities. We also fabricated HBTs with regrown extrinsic base layers and InGaAs graded base layers which drastically reduce base contact resistance and base transit time, respectively. It is shown that this type of HBTs not only improve the noise-figure at X-band or Ku-band but also make the noise impedance matching easier.
AB - In this paper we present our approach to improving microwave noise performance of HBTs. A minimum noise figure of 0.83 dB was obtained at 2 GHz by using an emitter guarding structure which improves the DC current gain particularly at low current densities. We also fabricated HBTs with regrown extrinsic base layers and InGaAs graded base layers which drastically reduce base contact resistance and base transit time, respectively. It is shown that this type of HBTs not only improve the noise-figure at X-band or Ku-band but also make the noise impedance matching easier.
UR - http://www.scopus.com/inward/record.url?scp=0031625414&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031625414&partnerID=8YFLogxK
M3 - Conference contribution
VL - 2
SP - 693
EP - 696
BT - IEEE MTT-S International Microwave Symposium Digest
A2 - Meixner, R.
PB - IEEE
ER -