Abstract
In this paper we present our approach to improving microwave noise performance of HBTs. A minimum noise figure of 0.83 dB was obtained at 2 GHz by using an emitter guarding structure which improves the DC current gain particularly at low current densities. We also fabricated HBTs with regrown extrinsic base layers and InGaAs graded base layers which drastically reduce base contact resistance and base transit time, respectively. It is shown that this type of HBTs not only improve the noise-figure at X-band or Ku-band but also make the noise impedance matching easier.
| Original language | English |
|---|---|
| Pages (from-to) | 693-696 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 2 |
| Publication status | Published - 1998 Jan 1 |
| Event | Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA Duration: 1998 Jun 7 → 1998 Jun 12 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Cite this
Dodo, H., Amamiya, Y., Niwa, T., Mamada, M., Tanaka, S., & Shimawaki, H. (1998). Microwave low-noise GaAs HBTs. IEEE MTT-S International Microwave Symposium Digest, 2, 693-696.