Abstract
In this paper we present our approach to improving microwave noise performance of HBTs. A minimum noise figure of 0.83 dB was obtained at 2 GHz by using an emitter guarding structure which improves the DC current gain particularly at low current densities. We also fabricated HBTs with regrown extrinsic base layers and InGaAs graded base layers which drastically reduce base contact resistance and base transit time, respectively. It is shown that this type of HBTs not only improve the noise-figure at X-band or Ku-band but also make the noise impedance matching easier.
| Original language | English |
|---|---|
| Title of host publication | IEEE MTT-S International Microwave Symposium Digest |
| Editors | R. Meixner |
| Publisher | IEEE |
| Pages | 693-696 |
| Number of pages | 4 |
| Volume | 2 |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA Duration: 1998 Jun 7 → 1998 Jun 12 |
Other
| Other | Proceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) |
|---|---|
| City | Baltimore, MD, USA |
| Period | 98/6/7 → 98/6/12 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Dodo, H., Amamiya, Y., Niwa, T., Mamada, M., Tanaka, S., & Shimawaki, H. (1998). Microwave low-noise GaAs HBTs. In R. Meixner (Ed.), IEEE MTT-S International Microwave Symposium Digest (Vol. 2, pp. 693-696). IEEE.