Microwave/millimeter-wave power HBTs with regrown extrinsic base layers

Yasushi Amamiya, Chang Woo Kim, Norio Goto, Shinichi Tanaka, Naoki Furuhata, Hidenori Shimawaki, Kazuhiko Honjo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

This paper reports the first power application of AlGaAs/GaAs HBTs with selective regrown extrinsic base layers. The ultra-high carbon doping of the regrown extrinsic base led to an extremely low base resistance, which resulted in f max of 143 GHz. Reliability test under both thermal and current stresses demonstrated the stability of the regrown HBT structure. A three-dimensional thermal simulator was also developed to determine the suitable pattern layout for the multi-finger structure. A common base HBT with six emitter fingers (240 μ m 2) delivered RF power performances of 365 mW CW output power with 23% power added efficiency and 9.1 dB power gain at 25.2 GHz.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages199-202
Number of pages4
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1994 Dec 111994 Dec 14

Other

OtherProceedings of the 1994 IEEE International Electron Devices Meeting
CitySan Francisco, CA, USA
Period94/12/1194/12/14

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Amamiya, Y., Kim, C. W., Goto, N., Tanaka, S., Furuhata, N., Shimawaki, H., & Honjo, K. (1994). Microwave/millimeter-wave power HBTs with regrown extrinsic base layers. In Technical Digest - International Electron Devices Meeting (pp. 199-202). IEEE.