Microwave/millimeter-wave power HBTs with regrown extrinsic base layers

Yasushi Amamiya, Chang Woo Kim, Norio Goto, Shinichi Tanaka, Naoki Furuhata, Hidenori Shimawaki, Kazuhiko Honjo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

This paper reports the first power application of AlGaAs/GaAs HBTs with selective regrown extrinsic base layers. The ultra-high carbon doping of the regrown extrinsic base led to an extremely low base resistance, which resulted in f max of 143 GHz. Reliability test under both thermal and current stresses demonstrated the stability of the regrown HBT structure. A three-dimensional thermal simulator was also developed to determine the suitable pattern layout for the multi-finger structure. A common base HBT with six emitter fingers (240 μ m 2) delivered RF power performances of 365 mW CW output power with 23% power added efficiency and 9.1 dB power gain at 25.2 GHz.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages199-202
Number of pages4
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1994 Dec 111994 Dec 14

Other

OtherProceedings of the 1994 IEEE International Electron Devices Meeting
CitySan Francisco, CA, USA
Period94/12/1194/12/14

Fingerprint

Wave power
Heterojunction bipolar transistors
Millimeter waves
Microwaves
Simulators
Doping (additives)
Carbon
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Amamiya, Y., Kim, C. W., Goto, N., Tanaka, S., Furuhata, N., Shimawaki, H., & Honjo, K. (1994). Microwave/millimeter-wave power HBTs with regrown extrinsic base layers. In Technical Digest - International Electron Devices Meeting (pp. 199-202). IEEE.

Microwave/millimeter-wave power HBTs with regrown extrinsic base layers. / Amamiya, Yasushi; Kim, Chang Woo; Goto, Norio; Tanaka, Shinichi; Furuhata, Naoki; Shimawaki, Hidenori; Honjo, Kazuhiko.

Technical Digest - International Electron Devices Meeting. IEEE, 1994. p. 199-202.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Amamiya, Y, Kim, CW, Goto, N, Tanaka, S, Furuhata, N, Shimawaki, H & Honjo, K 1994, Microwave/millimeter-wave power HBTs with regrown extrinsic base layers. in Technical Digest - International Electron Devices Meeting. IEEE, pp. 199-202, Proceedings of the 1994 IEEE International Electron Devices Meeting, San Francisco, CA, USA, 94/12/11.
Amamiya Y, Kim CW, Goto N, Tanaka S, Furuhata N, Shimawaki H et al. Microwave/millimeter-wave power HBTs with regrown extrinsic base layers. In Technical Digest - International Electron Devices Meeting. IEEE. 1994. p. 199-202
Amamiya, Yasushi ; Kim, Chang Woo ; Goto, Norio ; Tanaka, Shinichi ; Furuhata, Naoki ; Shimawaki, Hidenori ; Honjo, Kazuhiko. / Microwave/millimeter-wave power HBTs with regrown extrinsic base layers. Technical Digest - International Electron Devices Meeting. IEEE, 1994. pp. 199-202
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