Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers.

Y.Amamiya Y.Amamiya, Y.Amamiya C.W.KimN.GotoS.TanakaN.Furuhata H.Shimawaki, K.Honjo K.Honjo, Shinichi Tanaka

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	199-202
Journal	IEEE International Electron Device Meeting
Publication status	Published - 1994 Jan 1

Cite this

@article{d701342c33de4cce8578a7f171cf9746,

title = "Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers.",

author = "Y.Amamiya Y.Amamiya and H.Shimawaki, {Y.Amamiya C.W.KimN.GotoS.TanakaN.Furuhata} and K.Honjo K.Honjo and Shinichi Tanaka",

year = "1994",

month = jan,

day = "1",

language = "English",

pages = "199--202",

journal = "IEEE International Electron Device Meeting",

}

TY - JOUR

T1 - Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers.

AU - Y.Amamiya, Y.Amamiya

AU - H.Shimawaki, Y.Amamiya C.W.KimN.GotoS.TanakaN.Furuhata

AU - K.Honjo, K.Honjo

AU - Tanaka, Shinichi

PY - 1994/1/1

Y1 - 1994/1/1

M3 - Article

SP - 199

EP - 202

JO - IEEE International Electron Device Meeting

JF - IEEE International Electron Device Meeting

ER -