| Original language | English |
|---|---|
| Pages (from-to) | 199-202 |
| Journal | IEEE International Electron Device Meeting |
| Publication status | Published - 1994 Jan 1 |
Cite this
Y.Amamiya, Y. A., H.Shimawaki, Y. A. C. W. K. G. T. F., K.Honjo, K. H., & Tanaka, S. (1994). Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers. IEEE International Electron Device Meeting, 199-202.
Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers. / Y.Amamiya, Y.Amamiya; H.Shimawaki, Y.Amamiya C.W.KimN.GotoS.TanakaN.Furuhata; K.Honjo, K.Honjo; Tanaka, Shinichi.
In: IEEE International Electron Device Meeting, 01.01.1994, p. 199-202.Research output: Contribution to journal › Article
Y.Amamiya, YA, H.Shimawaki, YACWKGTF, K.Honjo, KH & Tanaka, S 1994, 'Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers.', IEEE International Electron Device Meeting, pp. 199-202.
Y.Amamiya YA, H.Shimawaki YACWKGTF, K.Honjo KH, Tanaka S. Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers. IEEE International Electron Device Meeting. 1994 Jan 1;199-202.
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title = "Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers.",
author = "Y.Amamiya Y.Amamiya and H.Shimawaki, {Y.Amamiya C.W.KimN.GotoS.TanakaN.Furuhata} and K.Honjo K.Honjo and Shinichi Tanaka",
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