Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers.

Y.Amamiya Y.Amamiya, Y.Amamiya C.W.KimN.GotoS.TanakaN.Furuhata H.Shimawaki, K.Honjo K.Honjo, Shinichi Tanaka

Research output: Contribution to journalArticle

5 Citations (Scopus)
Original languageEnglish
Pages (from-to)199-202
JournalIEEE International Electron Device Meeting
Publication statusPublished - 1994 Jan 1

Cite this

Y.Amamiya, Y. A., H.Shimawaki, Y. A. C. W. K. G. T. F., K.Honjo, K. H., & Tanaka, S. (1994). Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers. IEEE International Electron Device Meeting, 199-202.

Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers. / Y.Amamiya, Y.Amamiya; H.Shimawaki, Y.Amamiya C.W.KimN.GotoS.TanakaN.Furuhata; K.Honjo, K.Honjo; Tanaka, Shinichi.

In: IEEE International Electron Device Meeting, 01.01.1994, p. 199-202.

Research output: Contribution to journalArticle

Y.Amamiya, Y.Amamiya ; H.Shimawaki, Y.Amamiya C.W.KimN.GotoS.TanakaN.Furuhata ; K.Honjo, K.Honjo ; Tanaka, Shinichi. / Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers. In: IEEE International Electron Device Meeting. 1994 ; pp. 199-202.
@article{d701342c33de4cce8578a7f171cf9746,
title = "Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers.",
author = "Y.Amamiya Y.Amamiya and H.Shimawaki, {Y.Amamiya C.W.KimN.GotoS.TanakaN.Furuhata} and K.Honjo K.Honjo and Shinichi Tanaka",
year = "1994",
month = "1",
day = "1",
language = "English",
pages = "199--202",
journal = "IEEE International Electron Device Meeting",

}

TY - JOUR

T1 - Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers.

AU - Y.Amamiya, Y.Amamiya

AU - H.Shimawaki, Y.Amamiya C.W.KimN.GotoS.TanakaN.Furuhata

AU - K.Honjo, K.Honjo

AU - Tanaka, Shinichi

PY - 1994/1/1

Y1 - 1994/1/1

M3 - Article

SP - 199

EP - 202

JO - IEEE International Electron Device Meeting

JF - IEEE International Electron Device Meeting

ER -