MOCVD growth of c-axis oriented GaN on (110) Si substrates

H. Ishikawa, K. Shimanaka, K. Hiromori, N. Mori, T. Morimoto

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)Tu-58
JournalDefault journal
Publication statusPublished - 2008 Jul 1

Cite this

Ishikawa, H., Shimanaka, K., Hiromori, K., Mori, N., & Morimoto, T. (2008). MOCVD growth of c-axis oriented GaN on (110) Si substrates. Default journal, Tu-58.

MOCVD growth of c-axis oriented GaN on (110) Si substrates. / Ishikawa, H.; Shimanaka, K.; Hiromori, K.; Mori, N.; Morimoto, T.

In: Default journal, 01.07.2008, p. Tu-58.

Research output: Contribution to journalArticle

Ishikawa, H, Shimanaka, K, Hiromori, K, Mori, N & Morimoto, T 2008, 'MOCVD growth of c-axis oriented GaN on (110) Si substrates', Default journal, pp. Tu-58.
Ishikawa H, Shimanaka K, Hiromori K, Mori N, Morimoto T. MOCVD growth of c-axis oriented GaN on (110) Si substrates. Default journal. 2008 Jul 1;Tu-58.
Ishikawa, H. ; Shimanaka, K. ; Hiromori, K. ; Mori, N. ; Morimoto, T. / MOCVD growth of c-axis oriented GaN on (110) Si substrates. In: Default journal. 2008 ; pp. Tu-58.
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