MOCVD growth of GaN on porous silicon substrates

Hiroyasu Ishikawa; Keita Shimanaka; Fumiyuki Tokura; Yasuhiko Hayashi; Yosuke Hara; Masami Nakanishi

doi:10.1016/j.jcrysgro.2008.08.030

MOCVD growth of GaN on porous silicon substrates

Hiroyasu Ishikawa, Keita Shimanaka, Fumiyuki Tokura, Yasuhiko Hayashi, Yosuke Hara, Masami Nakanishi

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganic chemical vapor deposition. The full-width at half-maximum (FWHM) of the asymmetric rocking curve for a GaN film on a PSi substrate was narrower than that for a GaN film on a normal flat-Si substrate (Flat-Si), whereas the FWHM of the symmetric one is broader. Compared with a GaN film on Flat-Si, the extent of wafer bending was reduced and the band-edge emission from GaN was enhanced. Moreover, the tensile stress in the film was significantly reduced.

Original language	English
Pages (from-to)	4900-4903
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	23
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.08.030
Publication status	Published - 2008 Nov 15
Externally published	Yes

Keywords

A1. Crystal morphology
A1. Surfaces
A1. X-ray diffraction
A3. Metalorganic chemical vapor deposition
B1. Nitrides
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "MOCVD growth of GaN on porous silicon substrates",

abstract = "Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganic chemical vapor deposition. The full-width at half-maximum (FWHM) of the asymmetric rocking curve for a GaN film on a PSi substrate was narrower than that for a GaN film on a normal flat-Si substrate (Flat-Si), whereas the FWHM of the symmetric one is broader. Compared with a GaN film on Flat-Si, the extent of wafer bending was reduced and the band-edge emission from GaN was enhanced. Moreover, the tensile stress in the film was significantly reduced.",

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AU - Ishikawa, Hiroyasu

AU - Shimanaka, Keita

AU - Tokura, Fumiyuki

AU - Hayashi, Yasuhiko

AU - Hara, Yosuke

AU - Nakanishi, Masami

PY - 2008/11/15

Y1 - 2008/11/15

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KW - A1. Surfaces

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