MOCVD growth of GaN on porous silicon substrates

Hiroyasu Ishikawa, Keita Shimanaka, Fumiyuki Tokura, Yasuhiko Hayashi, Yosuke Hara, Masami Nakanishi

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganic chemical vapor deposition. The full-width at half-maximum (FWHM) of the asymmetric rocking curve for a GaN film on a PSi substrate was narrower than that for a GaN film on a normal flat-Si substrate (Flat-Si), whereas the FWHM of the symmetric one is broader. Compared with a GaN film on Flat-Si, the extent of wafer bending was reduced and the band-edge emission from GaN was enhanced. Moreover, the tensile stress in the film was significantly reduced.

Original languageEnglish
Pages (from-to)4900-4903
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number23
DOIs
Publication statusPublished - 2008 Nov 15
Externally publishedYes

Fingerprint

Porous silicon
Metallorganic chemical vapor deposition
porous silicon
metalorganic chemical vapor deposition
Substrates
Full width at half maximum
tensile stress
Tensile stress
Single crystals
wafers
Thin films
single crystals
curves
thin films

Keywords

  • A1. Crystal morphology
  • A1. Surfaces
  • A1. X-ray diffraction
  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Ishikawa, H., Shimanaka, K., Tokura, F., Hayashi, Y., Hara, Y., & Nakanishi, M. (2008). MOCVD growth of GaN on porous silicon substrates. Journal of Crystal Growth, 310(23), 4900-4903. https://doi.org/10.1016/j.jcrysgro.2008.08.030

MOCVD growth of GaN on porous silicon substrates. / Ishikawa, Hiroyasu; Shimanaka, Keita; Tokura, Fumiyuki; Hayashi, Yasuhiko; Hara, Yosuke; Nakanishi, Masami.

In: Journal of Crystal Growth, Vol. 310, No. 23, 15.11.2008, p. 4900-4903.

Research output: Contribution to journalArticle

Ishikawa, H, Shimanaka, K, Tokura, F, Hayashi, Y, Hara, Y & Nakanishi, M 2008, 'MOCVD growth of GaN on porous silicon substrates', Journal of Crystal Growth, vol. 310, no. 23, pp. 4900-4903. https://doi.org/10.1016/j.jcrysgro.2008.08.030
Ishikawa H, Shimanaka K, Tokura F, Hayashi Y, Hara Y, Nakanishi M. MOCVD growth of GaN on porous silicon substrates. Journal of Crystal Growth. 2008 Nov 15;310(23):4900-4903. https://doi.org/10.1016/j.jcrysgro.2008.08.030
Ishikawa, Hiroyasu ; Shimanaka, Keita ; Tokura, Fumiyuki ; Hayashi, Yasuhiko ; Hara, Yosuke ; Nakanishi, Masami. / MOCVD growth of GaN on porous silicon substrates. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 23. pp. 4900-4903.
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