MOCVD growth of GaN on porous silicon substrates

Hiroyasu Ishikawa, Keita Shimanaka, Fumiyuki Tokura, Yasuhiko Hayashi, Yosuke Hara, Masami Nakanishi

Research output: Contribution to journalArticle

25 Citations (Scopus)


Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganic chemical vapor deposition. The full-width at half-maximum (FWHM) of the asymmetric rocking curve for a GaN film on a PSi substrate was narrower than that for a GaN film on a normal flat-Si substrate (Flat-Si), whereas the FWHM of the symmetric one is broader. Compared with a GaN film on Flat-Si, the extent of wafer bending was reduced and the band-edge emission from GaN was enhanced. Moreover, the tensile stress in the film was significantly reduced.

Original languageEnglish
Pages (from-to)4900-4903
Number of pages4
JournalJournal of Crystal Growth
Issue number23
Publication statusPublished - 2008 Nov 15
Externally publishedYes


  • A1. Crystal morphology
  • A1. Surfaces
  • A1. X-ray diffraction
  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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  • Cite this

    Ishikawa, H., Shimanaka, K., Tokura, F., Hayashi, Y., Hara, Y., & Nakanishi, M. (2008). MOCVD growth of GaN on porous silicon substrates. Journal of Crystal Growth, 310(23), 4900-4903.