Abstract
Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganic chemical vapor deposition. The full-width at half-maximum (FWHM) of the asymmetric rocking curve for a GaN film on a PSi substrate was narrower than that for a GaN film on a normal flat-Si substrate (Flat-Si), whereas the FWHM of the symmetric one is broader. Compared with a GaN film on Flat-Si, the extent of wafer bending was reduced and the band-edge emission from GaN was enhanced. Moreover, the tensile stress in the film was significantly reduced.
| Original language | English |
|---|---|
| Pages (from-to) | 4900-4903 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 310 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2008 Nov 15 |
Keywords
- A1. Crystal morphology
- A1. Surfaces
- A1. X-ray diffraction
- A3. Metalorganic chemical vapor deposition
- B1. Nitrides
- B2. Semiconducting III-V materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Cite this
Ishikawa, H., Shimanaka, K., Tokura, F., Hayashi, Y., Hara, Y., & Nakanishi, M. (2008). MOCVD growth of GaN on porous silicon substrates. Journal of Crystal Growth, 310(23), 4900-4903. https://doi.org/10.1016/j.jcrysgro.2008.08.030