MOCVD growth of GaN on porous silicon substrates

Hiroyasu Ishikawa; Keita Shimanaka; Fumiyuki Tokura; Yasuhiko Hayashi; Yosuke Hara; Masami Nakanishi

doi:10.1016/j.jcrysgro.2008.08.030

MOCVD growth of GaN on porous silicon substrates

Hiroyasu Ishikawa, Keita Shimanaka, Fumiyuki Tokura, Yasuhiko Hayashi, Yosuke Hara, Masami Nakanishi

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganic chemical vapor deposition. The full-width at half-maximum (FWHM) of the asymmetric rocking curve for a GaN film on a PSi substrate was narrower than that for a GaN film on a normal flat-Si substrate (Flat-Si), whereas the FWHM of the symmetric one is broader. Compared with a GaN film on Flat-Si, the extent of wafer bending was reduced and the band-edge emission from GaN was enhanced. Moreover, the tensile stress in the film was significantly reduced.

Original language	English
Pages (from-to)	4900-4903
Number of pages	4
Journal	Journal of Crystal Growth
Volume	310
Issue number	23
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.08.030
Publication status	Published - 2008 Nov 15
Externally published	Yes

Keywords

A1. Crystal morphology
A1. Surfaces
A1. X-ray diffraction
A3. Metalorganic chemical vapor deposition
B1. Nitrides
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2008.08.030

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title = "MOCVD growth of GaN on porous silicon substrates",

abstract = "Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganic chemical vapor deposition. The full-width at half-maximum (FWHM) of the asymmetric rocking curve for a GaN film on a PSi substrate was narrower than that for a GaN film on a normal flat-Si substrate (Flat-Si), whereas the FWHM of the symmetric one is broader. Compared with a GaN film on Flat-Si, the extent of wafer bending was reduced and the band-edge emission from GaN was enhanced. Moreover, the tensile stress in the film was significantly reduced.",

keywords = "A1. Crystal morphology, A1. Surfaces, A1. X-ray diffraction, A3. Metalorganic chemical vapor deposition, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Hiroyasu Ishikawa and Keita Shimanaka and Fumiyuki Tokura and Yasuhiko Hayashi and Yosuke Hara and Masami Nakanishi",

note = "Funding Information: The author would like to acknowledge Mr. T. Masuda and M. Azfar bin M. Amir at the Nagoya Institute of Technology for their assistance. This work is partially supported by Grant-in-Aid for Young Scientists (B) (19760235) from The Ministry of Education, Culture, Sports, Science, and Technology, Japan.",

year = "2008",

month = nov,

day = "15",

doi = "10.1016/j.jcrysgro.2008.08.030",

language = "English",

volume = "310",

pages = "4900--4903",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - MOCVD growth of GaN on porous silicon substrates

AU - Ishikawa, Hiroyasu

AU - Shimanaka, Keita

AU - Tokura, Fumiyuki

AU - Hayashi, Yasuhiko

AU - Hara, Yosuke

AU - Nakanishi, Masami

N1 - Funding Information: The author would like to acknowledge Mr. T. Masuda and M. Azfar bin M. Amir at the Nagoya Institute of Technology for their assistance. This work is partially supported by Grant-in-Aid for Young Scientists (B) (19760235) from The Ministry of Education, Culture, Sports, Science, and Technology, Japan.

PY - 2008/11/15

Y1 - 2008/11/15

N2 - Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganic chemical vapor deposition. The full-width at half-maximum (FWHM) of the asymmetric rocking curve for a GaN film on a PSi substrate was narrower than that for a GaN film on a normal flat-Si substrate (Flat-Si), whereas the FWHM of the symmetric one is broader. Compared with a GaN film on Flat-Si, the extent of wafer bending was reduced and the band-edge emission from GaN was enhanced. Moreover, the tensile stress in the film was significantly reduced.

AB - Single-crystal GaN thin films were successfully grown on porous Si (PSi) substrates using metalorganic chemical vapor deposition. The full-width at half-maximum (FWHM) of the asymmetric rocking curve for a GaN film on a PSi substrate was narrower than that for a GaN film on a normal flat-Si substrate (Flat-Si), whereas the FWHM of the symmetric one is broader. Compared with a GaN film on Flat-Si, the extent of wafer bending was reduced and the band-edge emission from GaN was enhanced. Moreover, the tensile stress in the film was significantly reduced.

KW - A1. Crystal morphology

KW - A1. Surfaces

KW - A1. X-ray diffraction

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=56249109703&partnerID=8YFLogxK

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U2 - 10.1016/j.jcrysgro.2008.08.030

DO - 10.1016/j.jcrysgro.2008.08.030

M3 - Article

AN - SCOPUS:56249109703

VL - 310

SP - 4900

EP - 4903

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 23

ER -

MOCVD growth of GaN on porous silicon substrates

Abstract

Keywords

ASJC Scopus subject areas

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