MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors

Naoyuki Nakada, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

GaN/AlGaN distributed Bragg reflectors have been grown by low-pressure metal organic chemical vapor deposition. Those structures were fabricated on the atmospheric pressure grown GaN layer on sapphire substrate. The aluminum content in low-pressure grown AlGaN layers was estimated to be 0.60 by X-ray diffraction. The GaN layers grown under the low-pressure condition in GaN/Al0.60Ga0.40N multilayer were compressively strained. The flat surfaces without cracks were successfully obtained for the growth of GaN/Al0.60Ga0.40N distributed Bragg reflector. For the 45.5 pairs, a peak reflectivity of over 98% was obtained at a wavelength of 421 nm.

Original languageEnglish
Pages (from-to)961-967
Number of pages7
JournalJournal of Crystal Growth
Volume237-239
Issue number1-4 II
DOIs
Publication statusPublished - 2002 Apr
Externally publishedYes

Fingerprint

Distributed Bragg reflectors
Metallorganic chemical vapor deposition
Bragg reflectors
metalorganic chemical vapor deposition
low pressure
Organic Chemicals
surface cracks
Aluminum Oxide
Organic chemicals
Aluminum
Sapphire
Atmospheric pressure
flat surfaces
Chemical vapor deposition
atmospheric pressure
Multilayers
sapphire
Metals
Cracks
aluminum

Keywords

  • A3. Low pressure metal organic chemical vapor deposition
  • A3. Metal organic chemical vapor deposition
  • B3. Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors. / Nakada, Naoyuki; Ishikawa, Hiroyasu; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.

In: Journal of Crystal Growth, Vol. 237-239, No. 1-4 II, 04.2002, p. 961-967.

Research output: Contribution to journalArticle

Nakada, Naoyuki ; Ishikawa, Hiroyasu ; Egawa, Takashi ; Jimbo, Takashi ; Umeno, Masayoshi. / MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors. In: Journal of Crystal Growth. 2002 ; Vol. 237-239, No. 1-4 II. pp. 961-967.
@article{628f180229444676b4e35117a72ba549,
title = "MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors",
abstract = "GaN/AlGaN distributed Bragg reflectors have been grown by low-pressure metal organic chemical vapor deposition. Those structures were fabricated on the atmospheric pressure grown GaN layer on sapphire substrate. The aluminum content in low-pressure grown AlGaN layers was estimated to be 0.60 by X-ray diffraction. The GaN layers grown under the low-pressure condition in GaN/Al0.60Ga0.40N multilayer were compressively strained. The flat surfaces without cracks were successfully obtained for the growth of GaN/Al0.60Ga0.40N distributed Bragg reflector. For the 45.5 pairs, a peak reflectivity of over 98{\%} was obtained at a wavelength of 421 nm.",
keywords = "A3. Low pressure metal organic chemical vapor deposition, A3. Metal organic chemical vapor deposition, B3. Vertical cavity surface emitting lasers",
author = "Naoyuki Nakada and Hiroyasu Ishikawa and Takashi Egawa and Takashi Jimbo and Masayoshi Umeno",
year = "2002",
month = "4",
doi = "10.1016/S0022-0248(01)02022-X",
language = "English",
volume = "237-239",
pages = "961--967",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4 II",

}

TY - JOUR

T1 - MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors

AU - Nakada, Naoyuki

AU - Ishikawa, Hiroyasu

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 2002/4

Y1 - 2002/4

N2 - GaN/AlGaN distributed Bragg reflectors have been grown by low-pressure metal organic chemical vapor deposition. Those structures were fabricated on the atmospheric pressure grown GaN layer on sapphire substrate. The aluminum content in low-pressure grown AlGaN layers was estimated to be 0.60 by X-ray diffraction. The GaN layers grown under the low-pressure condition in GaN/Al0.60Ga0.40N multilayer were compressively strained. The flat surfaces without cracks were successfully obtained for the growth of GaN/Al0.60Ga0.40N distributed Bragg reflector. For the 45.5 pairs, a peak reflectivity of over 98% was obtained at a wavelength of 421 nm.

AB - GaN/AlGaN distributed Bragg reflectors have been grown by low-pressure metal organic chemical vapor deposition. Those structures were fabricated on the atmospheric pressure grown GaN layer on sapphire substrate. The aluminum content in low-pressure grown AlGaN layers was estimated to be 0.60 by X-ray diffraction. The GaN layers grown under the low-pressure condition in GaN/Al0.60Ga0.40N multilayer were compressively strained. The flat surfaces without cracks were successfully obtained for the growth of GaN/Al0.60Ga0.40N distributed Bragg reflector. For the 45.5 pairs, a peak reflectivity of over 98% was obtained at a wavelength of 421 nm.

KW - A3. Low pressure metal organic chemical vapor deposition

KW - A3. Metal organic chemical vapor deposition

KW - B3. Vertical cavity surface emitting lasers

UR - http://www.scopus.com/inward/record.url?scp=0036530599&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036530599&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)02022-X

DO - 10.1016/S0022-0248(01)02022-X

M3 - Article

VL - 237-239

SP - 961

EP - 967

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4 II

ER -