MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectors

Naoyuki Nakada, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

GaN/AlGaN distributed Bragg reflectors have been grown by low-pressure metal organic chemical vapor deposition. Those structures were fabricated on the atmospheric pressure grown GaN layer on sapphire substrate. The aluminum content in low-pressure grown AlGaN layers was estimated to be 0.60 by X-ray diffraction. The GaN layers grown under the low-pressure condition in GaN/Al0.60Ga0.40N multilayer were compressively strained. The flat surfaces without cracks were successfully obtained for the growth of GaN/Al0.60Ga0.40N distributed Bragg reflector. For the 45.5 pairs, a peak reflectivity of over 98% was obtained at a wavelength of 421 nm.

Original languageEnglish
Pages (from-to)961-967
Number of pages7
JournalJournal of Crystal Growth
Volume237-239
Issue number1 4 II
DOIs
Publication statusPublished - 2002 Apr

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Keywords

  • A3. Low pressure metal organic chemical vapor deposition
  • A3. Metal organic chemical vapor deposition
  • B3. Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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