Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

Yi Zhao, Masahiro Toyama, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalArticle

172 Citations (Scopus)

Abstract

Effects of moisture absorption on permittivity and surface roughness of lanthanum oxide (La2 O3) films were investigated. It was found that the moisture absorption deteriorates the permittivity (k) of La2 O3 films on silicon because of the formation of hexagonal La (OH)3 with a low permittivity after films were exposed to the air. Therefore, the moisture absorption should be a very possible reason for the permittivity variation of La2 O3 film in literatures reported, so far. Furthermore, a roughness enhancement was also observed after La2 O3 films were exposed to the air for several hours. This observation should be another concern of hygroscopic La2 O3 film application.

Original languageEnglish
Article number072904
JournalApplied Physics Letters
Volume88
Issue number7
DOIs
Publication statusPublished - 2006
Externally publishedYes

Fingerprint

lanthanum oxides
deterioration
moisture
oxide films
surface roughness
roughness
permittivity
augmentation
silicon
air

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon. / Zhao, Yi; Toyama, Masahiro; Kita, Koji; Kyuno, Kentaro; Toriumi, Akira.

In: Applied Physics Letters, Vol. 88, No. 7, 072904, 2006.

Research output: Contribution to journalArticle

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