Morphology of Ge thin films crystallized by Au-induced layer exchange at low temperature (220 °c)

Narin Sunthornpan, Kenjiro Kimura, Kentaro Kyuno

Research output: Contribution to journalArticlepeer-review

Abstract

The influence of the original amorphous Ge (a-Ge) layer thickness on the crystallization behavior by Au-induced crystallization at low temperature (220 °C) is studied. Initially, the coverage of the crystalline Ge (c-Ge) layer increases as the a-Ge layer thickness increases. A further increase in a-Ge layer thickness, however, results in the decrease of the coverage and appearance of the second Ge layer on top of the first layer, which results in the increase of surface roughness. The bottom c-Ge layer has a better crystal quality compared to the top layer. The maximum coverage of ∼97% with only a small amount of second layer is obtained by annealing an a-Ge(46 nm)/Au(29 nm) bilayer and a Hall effect hole mobility of as high as ∼85 cm2/V s is achieved.

Original languageEnglish
Article number030601
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume40
Issue number3
DOIs
Publication statusPublished - 2022 May 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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