We optimized the growth conditions of AlGaN layers using a large-size horizontal metalorganic vapor-phase epitaxy (MOVPE) system, and different-Al-content AlxGa1-xN/GaN heterostructures (0.26 ≤ x ≤ 0.70) were successfully grown on 100-mm-diameter sapphire substrates. It was confirmed that a good in-wafer uniformity of the alloy composition, within ±3%, was obtained even for the sample with the highest Al content of 0.70 and that no relaxation in the AlGaN layers occurred for all samples. A minimum sheet resistance of approximately 380Ω/sq (sheet carrier concentration = 1.76 × 1013/cm2) with good in-wafer uniformity was obtained for the sample with the Al content of 0.52.
- A1. Characterization
- A3. Metalorganic vapor-phase epitaxy
- B1. Nitrides
- B2. Semiconducting III-V materials
ASJC Scopus subject areas
- Condensed Matter Physics