MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates

Makoto Miyoshi, Masahiro Sakai, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Mitsuhiro Tanaka, Osamu Oda

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23 Citations (Scopus)


We optimized the growth conditions of AlGaN layers using a large-size horizontal metalorganic vapor-phase epitaxy (MOVPE) system, and different-Al-content AlxGa1-xN/GaN heterostructures (0.26 ≤ x ≤ 0.70) were successfully grown on 100-mm-diameter sapphire substrates. It was confirmed that a good in-wafer uniformity of the alloy composition, within ±3%, was obtained even for the sample with the highest Al content of 0.70 and that no relaxation in the AlGaN layers occurred for all samples. A minimum sheet resistance of approximately 380Ω/sq (sheet carrier concentration = 1.76 × 1013/cm2) with good in-wafer uniformity was obtained for the sample with the Al content of 0.52.

Original languageEnglish
Pages (from-to)293-299
Number of pages7
JournalJournal of Crystal Growth
Issue number1-4 SPEC. ISS.
Publication statusPublished - 2004 Dec 10
Externally publishedYes



  • A1. Characterization
  • A3. Metalorganic vapor-phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics

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