MOVPE Growth and Characterization of High-Al-Content AlxGa1-xN/GaN Heterostructures for High-Power HEMTs on 100-mm-Diameter Sapphire Substrates

M. Miyoshi, M. Sakai, S. Arulkumaran, H. Ishikawa, T. Egawa, T. Jimbo, M. Tanaka, O. Oda

Research output: Contribution to journalArticle

Original languageEnglish
JournalDefault journal
Publication statusPublished - 2004 May 1

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