MOVPE Growth and Characterization of High-Al-Content AlxGa1-xN/GaN Heterostructures for High-Power HEMTs on 100-mm-Diameter Sapphire Substrates

M. Miyoshi, M. Sakai, S. Arulkumaran, H. Ishikawa, T. Egawa, T. Jimbo, M. Tanaka, O. Oda

Research output: Contribution to journalArticle

Original languageEnglish
JournalDefault journal
Publication statusPublished - 2004 May 1

Cite this

MOVPE Growth and Characterization of High-Al-Content AlxGa1-xN/GaN Heterostructures for High-Power HEMTs on 100-mm-Diameter Sapphire Substrates. / Miyoshi, M.; Sakai, M.; Arulkumaran, S.; Ishikawa, H.; Egawa, T.; Jimbo, T.; Tanaka, M.; Oda, O.

In: Default journal, 01.05.2004.

Research output: Contribution to journalArticle

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AU - Miyoshi, M.

AU - Sakai, M.

AU - Arulkumaran, S.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Jimbo, T.

AU - Tanaka, M.

AU - Oda, O.

PY - 2004/5/1

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