Multichip module technology using AlN substrate for 2-Gbit/s high-speed switching module

Yuji Iseki, Fumihiko Shimizu, Toshio Sudo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The authors describe a multichip module (MCM) technology for making broadband digital switching modules. A copper/polyimide thin-film multilayer substrate is developed to achieve high-speed digital transmission. The substrate is formed on an aluminum nitride ceramic (AlN) wafer with good thermal characteristics. The meshed strip-line structure is used to control the characteristic impedance for 50-Ω signal lines, and the thin-film termination resistors are made of NiCr to prevent reflections. With this technology, the authors experimentally fabricated a broadband digital switching module, which is constructed from switching ICs in bare dies, clock distributing ICs in flat lead packages, and chip/micro-chip capacitors. In this module, differential digital transmission lines are adopted for high-speed signals to reduce the crosstalk noise effect. Heat generated from the module, which has a total of 25 W of power dissipation, is efficiently conducted through the AlN wafer. This module can operate many 2-Gb/s high-speed channels. A novel multichip module technology for high-performance systems was successfully developed.

Original languageEnglish
Title of host publicationProceedings - Electronic Components Conference
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages973-978
Number of pages6
ISBN (Print)0818626607
Publication statusPublished - 1992 Jan
EventProceedings of the 42nd Electronic Components and Technology Conference - San Diego, CA, USA
Duration: 1992 May 181992 May 20

Other

OtherProceedings of the 42nd Electronic Components and Technology Conference
CitySan Diego, CA, USA
Period92/5/1892/5/20

Fingerprint

Multichip modules
Aluminum nitride
Substrates
Strip telecommunication lines
Thin films
Crosstalk
Polyimides
Resistors
Clocks
Electric lines
Energy dissipation
Multilayers
Capacitors
Lead
Copper
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Iseki, Y., Shimizu, F., & Sudo, T. (1992). Multichip module technology using AlN substrate for 2-Gbit/s high-speed switching module. In Proceedings - Electronic Components Conference (pp. 973-978). Piscataway, NJ, United States: Publ by IEEE.

Multichip module technology using AlN substrate for 2-Gbit/s high-speed switching module. / Iseki, Yuji; Shimizu, Fumihiko; Sudo, Toshio.

Proceedings - Electronic Components Conference. Piscataway, NJ, United States : Publ by IEEE, 1992. p. 973-978.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Iseki, Y, Shimizu, F & Sudo, T 1992, Multichip module technology using AlN substrate for 2-Gbit/s high-speed switching module. in Proceedings - Electronic Components Conference. Publ by IEEE, Piscataway, NJ, United States, pp. 973-978, Proceedings of the 42nd Electronic Components and Technology Conference, San Diego, CA, USA, 92/5/18.
Iseki Y, Shimizu F, Sudo T. Multichip module technology using AlN substrate for 2-Gbit/s high-speed switching module. In Proceedings - Electronic Components Conference. Piscataway, NJ, United States: Publ by IEEE. 1992. p. 973-978
Iseki, Yuji ; Shimizu, Fumihiko ; Sudo, Toshio. / Multichip module technology using AlN substrate for 2-Gbit/s high-speed switching module. Proceedings - Electronic Components Conference. Piscataway, NJ, United States : Publ by IEEE, 1992. pp. 973-978
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