Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

K. Mikagi, T. Homma, T. Katoh, K. Tsunenari, Y. Murao

Research output: Contribution to conferencePaper

4 Citations (Scopus)

Abstract

Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH4) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.

Original languageEnglish
Pages33-39
Number of pages7
Publication statusPublished - 1989 Dec 1
EventSixth International VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA
Duration: 1989 Jun 121989 Jun 13

Other

OtherSixth International VLSI Multilevel Interconnection Conference
CitySanta Clara, CA, USA
Period89/6/1289/6/13

ASJC Scopus subject areas

  • Engineering(all)

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    Mikagi, K., Homma, T., Katoh, T., Tsunenari, K., & Murao, Y. (1989). Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film. 33-39. Paper presented at Sixth International VLSI Multilevel Interconnection Conference, Santa Clara, CA, USA, .