Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

K. Mikagi, Tetsuya Homma, T. Katoh, K. Tsunenari, Y. Murao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH4) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.

Original languageEnglish
Title of host publicationSixth Int VLSI Multilevel Interconnect Conf
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages33-39
Number of pages7
Publication statusPublished - 1989
Externally publishedYes
EventSixth International VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA
Duration: 1989 Jun 121989 Jun 13

Other

OtherSixth International VLSI Multilevel Interconnection Conference
CitySanta Clara, CA, USA
Period89/6/1289/6/13

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mikagi, K., Homma, T., Katoh, T., Tsunenari, K., & Murao, Y. (1989). Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film. In Anon (Ed.), Sixth Int VLSI Multilevel Interconnect Conf (pp. 33-39). Piscataway, NJ, United States: Publ by IEEE.