Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

K. Mikagi; T. Homma; T. Katoh; K. Tsunenari; Y. Murao

Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

K. Mikagi, T. Homma, T. Katoh, K. Tsunenari, Y. Murao

Research output: Contribution to conference › Paper › peer-review

Abstract

Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH₄) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.

Original language	English
Pages	33-39
Number of pages	7
Publication status	Published - 1989 Dec 1
Externally published	Yes
Event	Sixth International VLSI Multilevel Interconnection Conference - Santa Clara, CA, USA Duration: 1989 Jun 12 → 1989 Jun 13

Other

Other	Sixth International VLSI Multilevel Interconnection Conference
City	Santa Clara, CA, USA
Period	89/6/12 → 89/6/13

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film",

abstract = "Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH4) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.",

author = "K. Mikagi and T. Homma and T. Katoh and K. Tsunenari and Y. Murao",

year = "1989",

month = dec,

day = "1",

language = "English",

pages = "33--39",

note = "Sixth International VLSI Multilevel Interconnection Conference ; Conference date: 12-06-1989 Through 13-06-1989",

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TY - CONF

T1 - Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

AU - Mikagi, K.

AU - Homma, T.

AU - Katoh, T.

AU - Tsunenari, K.

AU - Murao, Y.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH4) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.

AB - Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH4) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time.

UR - http://www.scopus.com/inward/record.url?scp=0024927505&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024927505&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0024927505

SP - 33

EP - 39

T2 - Sixth International VLSI Multilevel Interconnection Conference

Y2 - 12 June 1989 through 13 June 1989

ER -

Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

Abstract

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ASJC Scopus subject areas

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