Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing

K. Kikuta, T. Nakajima, K. Ueno, T. Kikkawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

A multilevel planarized-trench-aluminum (PTA) interconnection is developed using reflow sputtering and chemical mechanical polishing (CMP). This new PTA interconnection technology has the advantages both for a simple process using only Al reflow sputtering for simultaneous via and trench filling and subsequent CMP [1], and for high reliability in the interconnection due to the use of reflow sputtering. A double-level PTA interconnection demonstrates 4 times lower via resistance and 9 times longer electromigration lifetimes in both wiring and vias than conventional interconnections.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages285-288
Number of pages4
ISBN (Print)0780314506
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 1993 Dec 51993 Dec 8

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period93/12/593/12/8

Fingerprint

Chemical mechanical polishing
Sputtering
Aluminum
Electromigration
Electric wiring

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kikuta, K., Nakajima, T., Ueno, K., & Kikkawa, T. (1993). Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 285-288). Piscataway, NJ, United States: Publ by IEEE.

Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing. / Kikuta, K.; Nakajima, T.; Ueno, K.; Kikkawa, T.

Technical Digest - International Electron Devices Meeting. ed. / Anon. Piscataway, NJ, United States : Publ by IEEE, 1993. p. 285-288.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kikuta, K, Nakajima, T, Ueno, K & Kikkawa, T 1993, Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing. in Anon (ed.), Technical Digest - International Electron Devices Meeting. Publ by IEEE, Piscataway, NJ, United States, pp. 285-288, Proceedings of the 1993 IEEE International Electron Devices Meeting, Washington, DC, USA, 93/12/5.
Kikuta K, Nakajima T, Ueno K, Kikkawa T. Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing. In Anon, editor, Technical Digest - International Electron Devices Meeting. Piscataway, NJ, United States: Publ by IEEE. 1993. p. 285-288
Kikuta, K. ; Nakajima, T. ; Ueno, K. ; Kikkawa, T. / Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing. Technical Digest - International Electron Devices Meeting. editor / Anon. Piscataway, NJ, United States : Publ by IEEE, 1993. pp. 285-288
@inproceedings{1add6d8a0f8648c49cd91c662e52e2bf,
title = "Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing",
abstract = "A multilevel planarized-trench-aluminum (PTA) interconnection is developed using reflow sputtering and chemical mechanical polishing (CMP). This new PTA interconnection technology has the advantages both for a simple process using only Al reflow sputtering for simultaneous via and trench filling and subsequent CMP [1], and for high reliability in the interconnection due to the use of reflow sputtering. A double-level PTA interconnection demonstrates 4 times lower via resistance and 9 times longer electromigration lifetimes in both wiring and vias than conventional interconnections.",
author = "K. Kikuta and T. Nakajima and K. Ueno and T. Kikkawa",
year = "1993",
language = "English",
isbn = "0780314506",
pages = "285--288",
editor = "Anon",
booktitle = "Technical Digest - International Electron Devices Meeting",
publisher = "Publ by IEEE",

}

TY - GEN

T1 - Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing

AU - Kikuta, K.

AU - Nakajima, T.

AU - Ueno, K.

AU - Kikkawa, T.

PY - 1993

Y1 - 1993

N2 - A multilevel planarized-trench-aluminum (PTA) interconnection is developed using reflow sputtering and chemical mechanical polishing (CMP). This new PTA interconnection technology has the advantages both for a simple process using only Al reflow sputtering for simultaneous via and trench filling and subsequent CMP [1], and for high reliability in the interconnection due to the use of reflow sputtering. A double-level PTA interconnection demonstrates 4 times lower via resistance and 9 times longer electromigration lifetimes in both wiring and vias than conventional interconnections.

AB - A multilevel planarized-trench-aluminum (PTA) interconnection is developed using reflow sputtering and chemical mechanical polishing (CMP). This new PTA interconnection technology has the advantages both for a simple process using only Al reflow sputtering for simultaneous via and trench filling and subsequent CMP [1], and for high reliability in the interconnection due to the use of reflow sputtering. A double-level PTA interconnection demonstrates 4 times lower via resistance and 9 times longer electromigration lifetimes in both wiring and vias than conventional interconnections.

UR - http://www.scopus.com/inward/record.url?scp=0027880066&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027880066&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0780314506

SP - 285

EP - 288

BT - Technical Digest - International Electron Devices Meeting

A2 - Anon, null

PB - Publ by IEEE

CY - Piscataway, NJ, United States

ER -