Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing

K. Kikuta, T. Nakajima, K. Ueno, T. Kikkawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

A multilevel planarized-trench-aluminum (PTA) interconnection is developed using reflow sputtering and chemical mechanical polishing (CMP). This new PTA interconnection technology has the advantages both for a simple process using only Al reflow sputtering for simultaneous via and trench filling and subsequent CMP [1], and for high reliability in the interconnection due to the use of reflow sputtering. A double-level PTA interconnection demonstrates 4 times lower via resistance and 9 times longer electromigration lifetimes in both wiring and vias than conventional interconnections.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages285-288
Number of pages4
ISBN (Print)0780314506
Publication statusPublished - 1993 Dec 1
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 1993 Dec 51993 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period93/12/593/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing'. Together they form a unique fingerprint.

  • Cite this

    Kikuta, K., Nakajima, T., Ueno, K., & Kikkawa, T. (1993). Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 285-288). (Technical Digest - International Electron Devices Meeting). Publ by IEEE.