TY - GEN
T1 - Multilevel planarized-trench-aluminum (PTA) interconnection using reflow sputtering and chemical mechanical polishing
AU - Kikuta, K.
AU - Nakajima, T.
AU - Ueno, K.
AU - Kikkawa, T.
PY - 1993/12/1
Y1 - 1993/12/1
N2 - A multilevel planarized-trench-aluminum (PTA) interconnection is developed using reflow sputtering and chemical mechanical polishing (CMP). This new PTA interconnection technology has the advantages both for a simple process using only Al reflow sputtering for simultaneous via and trench filling and subsequent CMP [1], and for high reliability in the interconnection due to the use of reflow sputtering. A double-level PTA interconnection demonstrates 4 times lower via resistance and 9 times longer electromigration lifetimes in both wiring and vias than conventional interconnections.
AB - A multilevel planarized-trench-aluminum (PTA) interconnection is developed using reflow sputtering and chemical mechanical polishing (CMP). This new PTA interconnection technology has the advantages both for a simple process using only Al reflow sputtering for simultaneous via and trench filling and subsequent CMP [1], and for high reliability in the interconnection due to the use of reflow sputtering. A double-level PTA interconnection demonstrates 4 times lower via resistance and 9 times longer electromigration lifetimes in both wiring and vias than conventional interconnections.
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M3 - Conference contribution
AN - SCOPUS:0027880066
SN - 0780314506
T3 - Technical Digest - International Electron Devices Meeting
SP - 285
EP - 288
BT - Technical Digest - International Electron Devices Meeting
A2 - Anon, null
PB - Publ by IEEE
T2 - Proceedings of the 1993 IEEE International Electron Devices Meeting
Y2 - 5 December 1993 through 8 December 1993
ER -