TY - GEN
T1 - Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering
AU - Kumar, Amitesh
AU - Das, Mangal
AU - Mandal, Biswajit
AU - Bhardwaj, Ritesh
AU - Aaryashree,
AU - Kranti, Abhinav
AU - Mukherjee, Shaibal
N1 - Funding Information:
Authors acknowledge SIC, IIT Indore. Amitesh Kumar acknowledges Council of Scientific & Industrial Research (CSIR). Mangal Das and Md. Arif Khan acknowledges Ministry of Electronics and Information Technology (MeitY) for providing fellowships under Visvesvaraya PhD Scheme of Electronics and IT. Dr. S. Mukherjee acknowledges MeitY YFRF under Visvesvaraya PhD Scheme of Electronics and IT.
Publisher Copyright:
© 2018 IEEE.
PY - 2019/1/24
Y1 - 2019/1/24
N2 - This work reports forming-free (FF) resistive switching (RS) with high endurance and retention for ZnO based thin films fabricated by dual ion beam sputtering (DIBS). Undoped and Ga-doped ZnO thin films have been used to compare the effect of doping upon RS behavior.
AB - This work reports forming-free (FF) resistive switching (RS) with high endurance and retention for ZnO based thin films fabricated by dual ion beam sputtering (DIBS). Undoped and Ga-doped ZnO thin films have been used to compare the effect of doping upon RS behavior.
UR - http://www.scopus.com/inward/record.url?scp=85062262299&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85062262299&partnerID=8YFLogxK
U2 - 10.1109/NANO.2018.8626226
DO - 10.1109/NANO.2018.8626226
M3 - Conference contribution
AN - SCOPUS:85062262299
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - 18th International Conference on Nanotechnology, NANO 2018
PB - IEEE Computer Society
T2 - 18th International Conference on Nanotechnology, NANO 2018
Y2 - 23 July 2018 through 26 July 2018
ER -