Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering

Amitesh Kumar; Mangal Das; Biswajit Mandal; Ritesh Bhardwaj; Abhinav Kranti; Shaibal Mukherjee

doi:10.1109/NANO.2018.8626226

Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering

Amitesh Kumar, Mangal Das, Biswajit Mandal, Ritesh Bhardwaj, Aaryashree, Abhinav Kranti, Shaibal Mukherjee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work reports forming-free (FF) resistive switching (RS) with high endurance and retention for ZnO based thin films fabricated by dual ion beam sputtering (DIBS). Undoped and Ga-doped ZnO thin films have been used to compare the effect of doping upon RS behavior.

Original language	English
Title of host publication	18th International Conference on Nanotechnology, NANO 2018
Publisher	IEEE Computer Society
ISBN (Electronic)	9781538653364
DOIs	https://doi.org/10.1109/NANO.2018.8626226
Publication status	Published - 2019 Jan 24
Externally published	Yes
Event	18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland Duration: 2018 Jul 23 → 2018 Jul 26

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
Volume	2018-July
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Conference

Conference	18th International Conference on Nanotechnology, NANO 2018
Country/Territory	Ireland
City	Cork
Period	18/7/23 → 18/7/26

ASJC Scopus subject areas

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

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10.1109/NANO.2018.8626226

Cite this

Kumar, A., Das, M., Mandal, B., Bhardwaj, R., Aaryashree, Kranti, A., & Mukherjee, S. (2019). Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering. In 18th International Conference on Nanotechnology, NANO 2018 [8626226] (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July). IEEE Computer Society. https://doi.org/10.1109/NANO.2018.8626226

Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering. / Kumar, Amitesh; Das, Mangal; Mandal, Biswajit; Bhardwaj, Ritesh; Aaryashree; Kranti, Abhinav; Mukherjee, Shaibal.

18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 2019. 8626226 (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2018-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kumar, A, Das, M, Mandal, B, Bhardwaj, R, Aaryashree, Kranti, A & Mukherjee, S 2019, Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering. in 18th International Conference on Nanotechnology, NANO 2018., 8626226, Proceedings of the IEEE Conference on Nanotechnology, vol. 2018-July, IEEE Computer Society, 18th International Conference on Nanotechnology, NANO 2018, Cork, Ireland, 18/7/23. https://doi.org/10.1109/NANO.2018.8626226

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title = "Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering",

abstract = "This work reports forming-free (FF) resistive switching (RS) with high endurance and retention for ZnO based thin films fabricated by dual ion beam sputtering (DIBS). Undoped and Ga-doped ZnO thin films have been used to compare the effect of doping upon RS behavior.",

author = "Amitesh Kumar and Mangal Das and Biswajit Mandal and Ritesh Bhardwaj and Aaryashree and Abhinav Kranti and Shaibal Mukherjee",

note = "Funding Information: Authors acknowledge SIC, IIT Indore. Amitesh Kumar acknowledges Council of Scientific & Industrial Research (CSIR). Mangal Das and Md. Arif Khan acknowledges Ministry of Electronics and Information Technology (MeitY) for providing fellowships under Visvesvaraya PhD Scheme of Electronics and IT. Dr. S. Mukherjee acknowledges MeitY YFRF under Visvesvaraya PhD Scheme of Electronics and IT. Publisher Copyright: {\textcopyright} 2018 IEEE.; 18th International Conference on Nanotechnology, NANO 2018 ; Conference date: 23-07-2018 Through 26-07-2018",

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doi = "10.1109/NANO.2018.8626226",

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AU - Mukherjee, Shaibal

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Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering

Abstract

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