Nano-Scaled ZnO Based RRAM with Memristive Behavior Fabricated by Dual Ion Beam Sputtering

Amitesh Kumar, Mangal Das, Biswajit Mandal, Ritesh Bhardwaj, Aaryashree, Abhinav Kranti, Shaibal Mukherjee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work reports forming-free (FF) resistive switching (RS) with high endurance and retention for ZnO based thin films fabricated by dual ion beam sputtering (DIBS). Undoped and Ga-doped ZnO thin films have been used to compare the effect of doping upon RS behavior.

Original languageEnglish
Title of host publication18th International Conference on Nanotechnology, NANO 2018
PublisherIEEE Computer Society
ISBN (Electronic)9781538653364
DOIs
Publication statusPublished - 2019 Jan 24
Externally publishedYes
Event18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland
Duration: 2018 Jul 232018 Jul 26

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2018-July
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference18th International Conference on Nanotechnology, NANO 2018
Country/TerritoryIreland
CityCork
Period18/7/2318/7/26

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

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