Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates

Makoto Miyoshi, Takashi Egawa, Hiroyasu Ishikawa, Kei Ichiro Asai, Tomohiko Shibata, Mitsuhiro Tanaka, Osamu Oda

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Al0.26 Ga0.74 NAlNGaN heterostructures with a 1 nm -thick AlN interfacial layer were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy, and they exhibited excellent film qualities and very high electron mobilities, such as over 2100 cm2 V s at room temperature and over 25 000 cm2 V s at 15 K with a two-dimensional electron-gas (2DEG) density of approximately 1× 1013 cm2. Cross-sectional transmission electron microscopy images revealed that the thin AlN layer with a thickness of 1 nm is continuously grown between AlGaN and GaN layers with atomically abrupt and flat interfaces. The experimental and calculated results for 2DEG transport properties indicated that an AlN interfacial layer between AlGaN and GaN layers effectively suppresses alloy disorder scattering and that epitaxial AlN/sapphire templates largely contribute to the high electron mobility because they allow for the realization of a high-quality GaN channel with a low dislocation density and a smooth interface.

Original languageEnglish
Article number063713
JournalJournal of Applied Physics
Volume98
Issue number6
DOIs
Publication statusPublished - 2005 Sep 15
Externally publishedYes

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electron gas
sapphire
templates
electron mobility
gas density
vapor phase epitaxy
transport properties
disorders
transmission electron microscopy
room temperature
scattering
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates. / Miyoshi, Makoto; Egawa, Takashi; Ishikawa, Hiroyasu; Asai, Kei Ichiro; Shibata, Tomohiko; Tanaka, Mitsuhiro; Oda, Osamu.

In: Journal of Applied Physics, Vol. 98, No. 6, 063713, 15.09.2005.

Research output: Contribution to journalArticle

@article{cfde9a3dfb4e4d8fb723a202419aa855,
title = "Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates",
abstract = "Al0.26 Ga0.74 NAlNGaN heterostructures with a 1 nm -thick AlN interfacial layer were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy, and they exhibited excellent film qualities and very high electron mobilities, such as over 2100 cm2 V s at room temperature and over 25 000 cm2 V s at 15 K with a two-dimensional electron-gas (2DEG) density of approximately 1× 1013 cm2. Cross-sectional transmission electron microscopy images revealed that the thin AlN layer with a thickness of 1 nm is continuously grown between AlGaN and GaN layers with atomically abrupt and flat interfaces. The experimental and calculated results for 2DEG transport properties indicated that an AlN interfacial layer between AlGaN and GaN layers effectively suppresses alloy disorder scattering and that epitaxial AlN/sapphire templates largely contribute to the high electron mobility because they allow for the realization of a high-quality GaN channel with a low dislocation density and a smooth interface.",
author = "Makoto Miyoshi and Takashi Egawa and Hiroyasu Ishikawa and Asai, {Kei Ichiro} and Tomohiko Shibata and Mitsuhiro Tanaka and Osamu Oda",
year = "2005",
month = "9",
day = "15",
doi = "10.1063/1.2060946",
language = "English",
volume = "98",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Nanostructural characterization and two-dimensional electron-gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates

AU - Miyoshi, Makoto

AU - Egawa, Takashi

AU - Ishikawa, Hiroyasu

AU - Asai, Kei Ichiro

AU - Shibata, Tomohiko

AU - Tanaka, Mitsuhiro

AU - Oda, Osamu

PY - 2005/9/15

Y1 - 2005/9/15

N2 - Al0.26 Ga0.74 NAlNGaN heterostructures with a 1 nm -thick AlN interfacial layer were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy, and they exhibited excellent film qualities and very high electron mobilities, such as over 2100 cm2 V s at room temperature and over 25 000 cm2 V s at 15 K with a two-dimensional electron-gas (2DEG) density of approximately 1× 1013 cm2. Cross-sectional transmission electron microscopy images revealed that the thin AlN layer with a thickness of 1 nm is continuously grown between AlGaN and GaN layers with atomically abrupt and flat interfaces. The experimental and calculated results for 2DEG transport properties indicated that an AlN interfacial layer between AlGaN and GaN layers effectively suppresses alloy disorder scattering and that epitaxial AlN/sapphire templates largely contribute to the high electron mobility because they allow for the realization of a high-quality GaN channel with a low dislocation density and a smooth interface.

AB - Al0.26 Ga0.74 NAlNGaN heterostructures with a 1 nm -thick AlN interfacial layer were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy, and they exhibited excellent film qualities and very high electron mobilities, such as over 2100 cm2 V s at room temperature and over 25 000 cm2 V s at 15 K with a two-dimensional electron-gas (2DEG) density of approximately 1× 1013 cm2. Cross-sectional transmission electron microscopy images revealed that the thin AlN layer with a thickness of 1 nm is continuously grown between AlGaN and GaN layers with atomically abrupt and flat interfaces. The experimental and calculated results for 2DEG transport properties indicated that an AlN interfacial layer between AlGaN and GaN layers effectively suppresses alloy disorder scattering and that epitaxial AlN/sapphire templates largely contribute to the high electron mobility because they allow for the realization of a high-quality GaN channel with a low dislocation density and a smooth interface.

UR - http://www.scopus.com/inward/record.url?scp=26244439041&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=26244439041&partnerID=8YFLogxK

U2 - 10.1063/1.2060946

DO - 10.1063/1.2060946

M3 - Article

AN - SCOPUS:26244439041

VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

M1 - 063713

ER -