Near-field optical mapping of exciton wave functions in a gaas quantum dot

K. Matsuda, T. Saiki, S. Nomura, M. Mihara, Y. Aoyagi, S. Nair, T. Takagahara

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162 Citations (Scopus)

Abstract

Near-field photoluminescence imaging spectroscopy of naturally occurring GaAs quantum dots (QDs) is presented. We successfully mapped out center-of -mass wave functions of an exciton confined in a GaAs QD in real space due to the enhancement of spatial resolution up to 30 nm. As a consequence, we discovered that the spatial profile of the exciton emission, which reflects the shape of a monolayer-high island, differs from that of biexciton emission, due to different distributions of the polarization field for the exciton and biexciton recombinations. This novel technique can be extensively applied to wave function engineering in the design and the fabrication of quantum devices.

Original languageEnglish
JournalPhysical Review Letters
Volume91
Issue number17
DOIs
Publication statusPublished - 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Matsuda, K., Saiki, T., Nomura, S., Mihara, M., Aoyagi, Y., Nair, S., & Takagahara, T. (2003). Near-field optical mapping of exciton wave functions in a gaas quantum dot. Physical Review Letters, 91(17). https://doi.org/10.1103/PhysRevLett.91.177401