Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN

Y. Liu, T. Egawa, H. Jiang, B. Zhang, Hiroyasu Ishikawa, M. Hao

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

PdTiAu and NiAu Schottky barrier diodes (SBDs) were demonstrated on quaternary AlInGaN. Current-voltage properties indicated that near-ideal and high-performance SBDs had been realized with ideality factor of 1.05, 1.07 and barrier height of 1.32, 0.98 eV for Pd and Ni SBDs, respectively. Capacitance-voltage measurement revealed that the high-density two-dimensional electron gas (2DEG) located at the AlInGaNGaN interface. Ruling out the possible contribution from piezoelectric polarization and conduction band offset, we believe that the formation of 2DEG is due to the existence of large spontaneous polarization in AlInGaN layer, which experimentally verifies the feasible application of quaternary AlInGaN in the high-electron-mobility transistor.

Original languageEnglish
Pages (from-to)6030-6032
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number24
DOIs
Publication statusPublished - 2004 Dec 13
Externally publishedYes

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Schottky diodes
electric contacts
polarization
high electron mobility transistors
electrical measurement
electron gas
conduction bands
capacitance
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN. / Liu, Y.; Egawa, T.; Jiang, H.; Zhang, B.; Ishikawa, Hiroyasu; Hao, M.

In: Applied Physics Letters, Vol. 85, No. 24, 13.12.2004, p. 6030-6032.

Research output: Contribution to journalArticle

Liu, Y. ; Egawa, T. ; Jiang, H. ; Zhang, B. ; Ishikawa, Hiroyasu ; Hao, M. / Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN. In: Applied Physics Letters. 2004 ; Vol. 85, No. 24. pp. 6030-6032.
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