New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead

Eiichi Hosomi; Chiaki Takubo; Hiroshi Tazawa; Koji Shibasaki; Yoichi Hiruta; Toshio Sudo

New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead

Eiichi Hosomi, Chiaki Takubo, Hiroshi Tazawa, Koji Shibasaki, Yoichi Hiruta, Toshio Sudo

Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

A 50 μm pitch Tape Automated Bonding (TAB) has been developed by applying newly developed TAB tape and inner lead bonding technology. A new electrodeposited Cu foil with high tensile strength and 18 μm thickness was adopted as the lead material. Sn plating on the inner leads has been thinned to 0.25 μm from the conventional 0.6 μm to avoid excess alloy formation. The inner leads were gang-bonded to the Au bumps. Results of the study of the metallurgy of the bonded region before and after high temperature storage are discussed.

Original language	English
Pages (from-to)	851-856
Number of pages	6
Journal	Proceedings - Electronic Components and Technology Conference
Publication status	Published - 1995 Jan 1
Event	Proceedings of the 1995 45th Electronic Components & Technology Conference - Las Vegas, NV, USA Duration: 1995 May 21 → 1995 May 24

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{4c45b1ed639243268d2509f80450f746,

title = "New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead",

abstract = "A 50 μm pitch Tape Automated Bonding (TAB) has been developed by applying newly developed TAB tape and inner lead bonding technology. A new electrodeposited Cu foil with high tensile strength and 18 μm thickness was adopted as the lead material. Sn plating on the inner leads has been thinned to 0.25 μm from the conventional 0.6 μm to avoid excess alloy formation. The inner leads were gang-bonded to the Au bumps. Results of the study of the metallurgy of the bonded region before and after high temperature storage are discussed.",

author = "Eiichi Hosomi and Chiaki Takubo and Hiroshi Tazawa and Koji Shibasaki and Yoichi Hiruta and Toshio Sudo",

year = "1995",

month = jan,

day = "1",

language = "English",

pages = "851--856",

journal = "Proceedings - Electronic Components and Technology Conference",

issn = "0569-5503",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1995 45th Electronic Components & Technology Conference ; Conference date: 21-05-1995 Through 24-05-1995",

}

TY - JOUR

T1 - New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead

AU - Hosomi, Eiichi

AU - Takubo, Chiaki

AU - Tazawa, Hiroshi

AU - Shibasaki, Koji

AU - Hiruta, Yoichi

AU - Sudo, Toshio

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A 50 μm pitch Tape Automated Bonding (TAB) has been developed by applying newly developed TAB tape and inner lead bonding technology. A new electrodeposited Cu foil with high tensile strength and 18 μm thickness was adopted as the lead material. Sn plating on the inner leads has been thinned to 0.25 μm from the conventional 0.6 μm to avoid excess alloy formation. The inner leads were gang-bonded to the Au bumps. Results of the study of the metallurgy of the bonded region before and after high temperature storage are discussed.

AB - A 50 μm pitch Tape Automated Bonding (TAB) has been developed by applying newly developed TAB tape and inner lead bonding technology. A new electrodeposited Cu foil with high tensile strength and 18 μm thickness was adopted as the lead material. Sn plating on the inner leads has been thinned to 0.25 μm from the conventional 0.6 μm to avoid excess alloy formation. The inner leads were gang-bonded to the Au bumps. Results of the study of the metallurgy of the bonded region before and after high temperature storage are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0029239511&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029239511&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029239511

SN - 0569-5503

SP - 851

EP - 856

JO - Proceedings - Electronic Components and Technology Conference

JF - Proceedings - Electronic Components and Technology Conference

T2 - Proceedings of the 1995 45th Electronic Components & Technology Conference

Y2 - 21 May 1995 through 24 May 1995

ER -

New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead

Abstract

ASJC Scopus subject areas

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