New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead

Eiichi Hosomi, Chiaki Takubo, Hiroshi Tazawa, Koji Shibasaki, Yoichi Hiruta, Toshio Sudo

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

A 50 μm pitch Tape Automated Bonding (TAB) has been developed by applying newly developed TAB tape and inner lead bonding technology. A new electrodeposited Cu foil with high tensile strength and 18 μm thickness was adopted as the lead material. Sn plating on the inner leads has been thinned to 0.25 μm from the conventional 0.6 μm to avoid excess alloy formation. The inner leads were gang-bonded to the Au bumps. Results of the study of the metallurgy of the bonded region before and after high temperature storage are discussed.

Original languageEnglish
Pages (from-to)851-856
Number of pages6
JournalProceedings - Electronic Components and Technology Conference
Publication statusPublished - 1995 Jan 1
EventProceedings of the 1995 45th Electronic Components & Technology Conference - Las Vegas, NV, USA
Duration: 1995 May 211995 May 24

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead'. Together they form a unique fingerprint.

  • Cite this

    Hosomi, E., Takubo, C., Tazawa, H., Shibasaki, K., Hiruta, Y., & Sudo, T. (1995). New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead. Proceedings - Electronic Components and Technology Conference, 851-856.