New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead

Eiichi Hosomi, Chiaki Takubo, Hiroshi Tazawa, Koji Shibasaki, Yoichi Hiruta, Toshio Sudo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A 50 μm pitch Tape Automated Bonding (TAB) has been developed by applying newly developed TAB tape and inner lead bonding technology. A new electrodeposited Cu foil with high tensile strength and 18 μm thickness was adopted as the lead material. Sn plating on the inner leads has been thinned to 0.25 μm from the conventional 0.6 μm to avoid excess alloy formation. The inner leads were gang-bonded to the Au bumps. Results of the study of the metallurgy of the bonded region before and after high temperature storage are discussed.

Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
PublisherIEEE
Pages851-856
Number of pages6
Publication statusPublished - 1995
EventProceedings of the 1995 45th Electronic Components & Technology Conference - Las Vegas, NV, USA
Duration: 1995 May 211995 May 24

Other

OtherProceedings of the 1995 45th Electronic Components & Technology Conference
CityLas Vegas, NV, USA
Period95/5/2195/5/24

Fingerprint

Tapes
Lead
Metallurgy
Plating
Metal foil
Tensile strength
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Hosomi, E., Takubo, C., Tazawa, H., Shibasaki, K., Hiruta, Y., & Sudo, T. (1995). New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead. In Proceedings - Electronic Components and Technology Conference (pp. 851-856). IEEE.

New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead. / Hosomi, Eiichi; Takubo, Chiaki; Tazawa, Hiroshi; Shibasaki, Koji; Hiruta, Yoichi; Sudo, Toshio.

Proceedings - Electronic Components and Technology Conference. IEEE, 1995. p. 851-856.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hosomi, E, Takubo, C, Tazawa, H, Shibasaki, K, Hiruta, Y & Sudo, T 1995, New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead. in Proceedings - Electronic Components and Technology Conference. IEEE, pp. 851-856, Proceedings of the 1995 45th Electronic Components & Technology Conference, Las Vegas, NV, USA, 95/5/21.
Hosomi E, Takubo C, Tazawa H, Shibasaki K, Hiruta Y, Sudo T. New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead. In Proceedings - Electronic Components and Technology Conference. IEEE. 1995. p. 851-856
Hosomi, Eiichi ; Takubo, Chiaki ; Tazawa, Hiroshi ; Shibasaki, Koji ; Hiruta, Yoichi ; Sudo, Toshio. / New bonding mechanism of 50 μm pitch TAB-ILB with 0.25 μm Sn plated Cu lead. Proceedings - Electronic Components and Technology Conference. IEEE, 1995. pp. 851-856
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abstract = "A 50 μm pitch Tape Automated Bonding (TAB) has been developed by applying newly developed TAB tape and inner lead bonding technology. A new electrodeposited Cu foil with high tensile strength and 18 μm thickness was adopted as the lead material. Sn plating on the inner leads has been thinned to 0.25 μm from the conventional 0.6 μm to avoid excess alloy formation. The inner leads were gang-bonded to the Au bumps. Results of the study of the metallurgy of the bonded region before and after high temperature storage are discussed.",
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