New Ion-Implantation Method for 4-μm Period Bubble Device

Fumiaki Hyuga, Masanori Shinohara, Atsuo Kozen, Makoto Hirano, Nobuyori Tsuzuki

    Research output: Contribution to journalLetter

    Abstract

    It is well-known that bubble propagation margins for ion-implanted bubble devices depend strongly on ion-implantation conditions. A new ion-implantation method is reported that can significantly improve bubble propagation margins for minor loops with 4X4 {\um}m bit cell size. The implantation was done through a Mo thin film layer so that the lattice strain and the anisotropy field change would be more uniform through the depth of the implanted layer. With this method, minor loops can be formed by hydrogen single implantation. Consequently simplification of the implantation process is achieved.

    Original languageEnglish
    Pages (from-to)545-546
    Number of pages2
    JournalIEEE Transactions on Magnetics
    Volume20
    Issue number4
    DOIs
    Publication statusPublished - 1984 Jul

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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  • Cite this

    Hyuga, F., Shinohara, M., Kozen, A., Hirano, M., & Tsuzuki, N. (1984). New Ion-Implantation Method for 4-μm Period Bubble Device. IEEE Transactions on Magnetics, 20(4), 545-546. https://doi.org/10.1109/TMAG.1984.1063123