New Ion-Implantation Method for 4-μm Period Bubble Device

Fumiaki Hyuga, Masanori Shinohara, Atsuo Kozen, Makoto Hirano, Nobuyori Tsuzuki

Research output: Contribution to journalArticle

Abstract

It is well-known that bubble propagation margins for ion-implanted bubble devices depend strongly on ion-implantation conditions. A new ion-implantation method is reported that can significantly improve bubble propagation margins for minor loops with 4X4 {\um}m bit cell size. The implantation was done through a Mo thin film layer so that the lattice strain and the anisotropy field change would be more uniform through the depth of the implanted layer. With this method, minor loops can be formed by hydrogen single implantation. Consequently simplification of the implantation process is achieved.

Original languageEnglish
Pages (from-to)545-546
Number of pages2
JournalIEEE Transactions on Magnetics
Volume20
Issue number4
DOIs
Publication statusPublished - 1984
Externally publishedYes

Fingerprint

Ion implantation
ion implantation
implantation
bubbles
margins
Hydrogen
Anisotropy
propagation
Ions
simplification
Thin films
anisotropy
hydrogen
thin films
cells
ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Hyuga, F., Shinohara, M., Kozen, A., Hirano, M., & Tsuzuki, N. (1984). New Ion-Implantation Method for 4-μm Period Bubble Device. IEEE Transactions on Magnetics, 20(4), 545-546. https://doi.org/10.1109/TMAG.1984.1063123

New Ion-Implantation Method for 4-μm Period Bubble Device. / Hyuga, Fumiaki; Shinohara, Masanori; Kozen, Atsuo; Hirano, Makoto; Tsuzuki, Nobuyori.

In: IEEE Transactions on Magnetics, Vol. 20, No. 4, 1984, p. 545-546.

Research output: Contribution to journalArticle

Hyuga, F, Shinohara, M, Kozen, A, Hirano, M & Tsuzuki, N 1984, 'New Ion-Implantation Method for 4-μm Period Bubble Device', IEEE Transactions on Magnetics, vol. 20, no. 4, pp. 545-546. https://doi.org/10.1109/TMAG.1984.1063123
Hyuga, Fumiaki ; Shinohara, Masanori ; Kozen, Atsuo ; Hirano, Makoto ; Tsuzuki, Nobuyori. / New Ion-Implantation Method for 4-μm Period Bubble Device. In: IEEE Transactions on Magnetics. 1984 ; Vol. 20, No. 4. pp. 545-546.
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