New method for characterizing dielectric properties of high-k films with time-dependent open-circuit potential measurement

Koji Kita, Masashi Sasagawa, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalArticle

Abstract

A new method for characterizing dielectric properties of high-k films was investigated, with an open-circuit potential (OCP) measurement during the etching of a film in a solution. The linear dependence of OCP on etching time was clearly observed. The areal density of the adsorbed ion. charges on the film surface was estimated from the slope of the time dependence of OCP, and it was shown to be closely related to the electronegativity difference between the atoms on the film surface and etchant atoms in the solution. This finding implies that the time-dependent OCP measurement is useful for evaluating the ionic characteristic of dielectric materials.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number6 B
Publication statusPublished - 2003 Jun 15
Externally publishedYes

Fingerprint

Dielectric properties
dielectric properties
Networks (circuits)
Etching
etching
Atoms
Electronegativity
etchants
time dependence
atoms
slopes
Ions
ions

Keywords

  • Dielectric film
  • Etching
  • High-k
  • Open-circuit potential
  • Polarizability
  • Silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

New method for characterizing dielectric properties of high-k films with time-dependent open-circuit potential measurement. / Kita, Koji; Sasagawa, Masashi; Kyuno, Kentaro; Toriumi, Akira.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 6 B, 15.06.2003.

Research output: Contribution to journalArticle

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