Abstract
A new method for characterizing dielectric properties of high-k films was investigated, with an open-circuit potential (OCP) measurement during the etching of a film in a solution. The linear dependence of OCP on etching time was clearly observed. The areal density of the adsorbed ion. charges on the film surface was estimated from the slope of the time dependence of OCP, and it was shown to be closely related to the electronegativity difference between the atoms on the film surface and etchant atoms in the solution. This finding implies that the time-dependent OCP measurement is useful for evaluating the ionic characteristic of dielectric materials.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 42 |
| Issue number | 6 B |
| Publication status | Published - 2003 Jun 15 |
| Externally published | Yes |
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Keywords
- Dielectric film
- Etching
- High-k
- Open-circuit potential
- Polarizability
- Silicon
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
New method for characterizing dielectric properties of high-k films with time-dependent open-circuit potential measurement. / Kita, Koji; Sasagawa, Masashi; Kyuno, Kentaro; Toriumi, Akira.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 6 B, 15.06.2003.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - New method for characterizing dielectric properties of high-k films with time-dependent open-circuit potential measurement
AU - Kita, Koji
AU - Sasagawa, Masashi
AU - Kyuno, Kentaro
AU - Toriumi, Akira
PY - 2003/6/15
Y1 - 2003/6/15
N2 - A new method for characterizing dielectric properties of high-k films was investigated, with an open-circuit potential (OCP) measurement during the etching of a film in a solution. The linear dependence of OCP on etching time was clearly observed. The areal density of the adsorbed ion. charges on the film surface was estimated from the slope of the time dependence of OCP, and it was shown to be closely related to the electronegativity difference between the atoms on the film surface and etchant atoms in the solution. This finding implies that the time-dependent OCP measurement is useful for evaluating the ionic characteristic of dielectric materials.
AB - A new method for characterizing dielectric properties of high-k films was investigated, with an open-circuit potential (OCP) measurement during the etching of a film in a solution. The linear dependence of OCP on etching time was clearly observed. The areal density of the adsorbed ion. charges on the film surface was estimated from the slope of the time dependence of OCP, and it was shown to be closely related to the electronegativity difference between the atoms on the film surface and etchant atoms in the solution. This finding implies that the time-dependent OCP measurement is useful for evaluating the ionic characteristic of dielectric materials.
KW - Dielectric film
KW - Etching
KW - High-k
KW - Open-circuit potential
KW - Polarizability
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=0041363415&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0041363415&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0041363415
VL - 42
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 B
ER -