Abstract
A new method for characterizing dielectric properties of high-k films was investigated, with an open-circuit potential (OCP) measurement during the etching of a film in a solution. The linear dependence of OCP on etching time was clearly observed. The areal density of the adsorbed ion. charges on the film surface was estimated from the slope of the time dependence of OCP, and it was shown to be closely related to the electronegativity difference between the atoms on the film surface and etchant atoms in the solution. This finding implies that the time-dependent OCP measurement is useful for evaluating the ionic characteristic of dielectric materials.
| Original language | English |
|---|---|
| Pages (from-to) | L631-L633 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 42 |
| Issue number | 6 B |
| Publication status | Published - 2003 Jun 15 |
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Keywords
- Dielectric film
- Etching
- High-k
- Open-circuit potential
- Polarizability
- Silicon
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Kita, K., Sasagawa, M., Kyuno, K., & Toriumi, A. (2003). New method for characterizing dielectric properties of high-k films with time-dependent open-circuit potential measurement. Japanese Journal of Applied Physics, Part 2: Letters, 42(6 B), L631-L633.