Abstract
A new MMIC development methodology that combines suitable devices with the 3D/multilayer interconnection process is presented. This approach allows the designer to choose the process so as to realize high performance and low cost. The integration of 0.15-μm pHEMT and 3D interconnection technologies is demonstrated. The slight changes of FET parameter with polyimide layer use can be easily incorporated into MMIC design and development.
Original language | English |
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Pages (from-to) | 1913-1916 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 3 |
Publication status | Published - 2000 Dec 11 |
Event | Proceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boston, MA, USA Duration: 2000 Jun 11 → 2000 Jun 16 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering