New methodology for microwave/millimeter-wave MMIC development

Kenji Kamogawa, Kenjiro Nishikawa, Ichihiko Toyoda, Masami Tokumitsu, Makoto Hirano, Tadao Nakagawa, Masahiro Muraguchi

    Research output: Contribution to journalConference article

    5 Citations (Scopus)

    Abstract

    A new MMIC development methodology that combines suitable devices with the 3D/multilayer interconnection process is presented. This approach allows the designer to choose the process so as to realize high performance and low cost. The integration of 0.15-μm pHEMT and 3D interconnection technologies is demonstrated. The slight changes of FET parameter with polyimide layer use can be easily incorporated into MMIC design and development.

    Original languageEnglish
    Pages (from-to)1913-1916
    Number of pages4
    JournalIEEE MTT-S International Microwave Symposium Digest
    Volume3
    Publication statusPublished - 2000 Dec 11
    EventProceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boston, MA, USA
    Duration: 2000 Jun 112000 Jun 16

    ASJC Scopus subject areas

    • Radiation
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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  • Cite this

    Kamogawa, K., Nishikawa, K., Toyoda, I., Tokumitsu, M., Hirano, M., Nakagawa, T., & Muraguchi, M. (2000). New methodology for microwave/millimeter-wave MMIC development. IEEE MTT-S International Microwave Symposium Digest, 3, 1913-1916.