Abstract
A new p-channel two dimensional hole gas (2DHG) heterostructure FET (HFET) which operates in MIS transistor-like mode has been fabricated on an undoped AlGaAs/GaAs heterostructure grown by molecular beam epitaxy (MBE). The device operates entirely in an enhancement-mode with a threshold voltage of minus 0. 3 V at both 300 K and 77 K. Maximum values of transconductances of 17 ms/mm at 300 K and 40 mS/mm at 77 K have been achieved in a 1 mu m gate length structure. As the present p-channel device is very simple, a complementary circuit scheme using a p-channel 2DHG HFET of this type will be most promising in future.
| Original language | English |
|---|---|
| Title of host publication | Japanese Journal of Applied Physics, Part 2: Letters |
| Pages | 335-337 |
| Number of pages | 3 |
| Volume | 24 |
| Edition | 5 |
| Publication status | Published - 1985 May |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
Cite this
NEW p-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET EMPLOYING TWO DIMENSIONAL HOLE GAS. / Oe, Kunishige; Hirano, Makoto; Arai, Kunihiro; Yanagawa, Fumihiko.
Japanese Journal of Applied Physics, Part 2: Letters. Vol. 24 5. ed. 1985. p. 335-337.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - NEW p-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET EMPLOYING TWO DIMENSIONAL HOLE GAS.
AU - Oe, Kunishige
AU - Hirano, Makoto
AU - Arai, Kunihiro
AU - Yanagawa, Fumihiko
PY - 1985/5
Y1 - 1985/5
N2 - A new p-channel two dimensional hole gas (2DHG) heterostructure FET (HFET) which operates in MIS transistor-like mode has been fabricated on an undoped AlGaAs/GaAs heterostructure grown by molecular beam epitaxy (MBE). The device operates entirely in an enhancement-mode with a threshold voltage of minus 0. 3 V at both 300 K and 77 K. Maximum values of transconductances of 17 ms/mm at 300 K and 40 mS/mm at 77 K have been achieved in a 1 mu m gate length structure. As the present p-channel device is very simple, a complementary circuit scheme using a p-channel 2DHG HFET of this type will be most promising in future.
AB - A new p-channel two dimensional hole gas (2DHG) heterostructure FET (HFET) which operates in MIS transistor-like mode has been fabricated on an undoped AlGaAs/GaAs heterostructure grown by molecular beam epitaxy (MBE). The device operates entirely in an enhancement-mode with a threshold voltage of minus 0. 3 V at both 300 K and 77 K. Maximum values of transconductances of 17 ms/mm at 300 K and 40 mS/mm at 77 K have been achieved in a 1 mu m gate length structure. As the present p-channel device is very simple, a complementary circuit scheme using a p-channel 2DHG HFET of this type will be most promising in future.
UR - http://www.scopus.com/inward/record.url?scp=0022068908&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0022068908&partnerID=8YFLogxK
M3 - Chapter
VL - 24
SP - 335
EP - 337
BT - Japanese Journal of Applied Physics, Part 2: Letters
ER -