NEW p-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET EMPLOYING TWO DIMENSIONAL HOLE GAS.

Kunishige Oe, Makoto Hirano, Kunihiro Arai, Fumihiko Yanagawa

Research output: Chapter in Book/Report/Conference proceedingChapter

15 Citations (Scopus)

Abstract

A new p-channel two dimensional hole gas (2DHG) heterostructure FET (HFET) which operates in MIS transistor-like mode has been fabricated on an undoped AlGaAs/GaAs heterostructure grown by molecular beam epitaxy (MBE). The device operates entirely in an enhancement-mode with a threshold voltage of minus 0. 3 V at both 300 K and 77 K. Maximum values of transconductances of 17 ms/mm at 300 K and 40 mS/mm at 77 K have been achieved in a 1 mu m gate length structure. As the present p-channel device is very simple, a complementary circuit scheme using a p-channel 2DHG HFET of this type will be most promising in future.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages335-337
Number of pages3
Volume24
Edition5
Publication statusPublished - 1985 May
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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    Oe, K., Hirano, M., Arai, K., & Yanagawa, F. (1985). NEW p-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET EMPLOYING TWO DIMENSIONAL HOLE GAS. In Japanese Journal of Applied Physics, Part 2: Letters (5 ed., Vol. 24, pp. 335-337)