NEW p-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET EMPLOYING TWO DIMENSIONAL HOLE GAS.

Kunishige Oe; Makoto Hirano; Kunihiro Arai; Fumihiko Yanagawa

NEW p-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET EMPLOYING TWO DIMENSIONAL HOLE GAS.

Kunishige Oe, Makoto Hirano, Kunihiro Arai, Fumihiko Yanagawa

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

A new p-channel two dimensional hole gas (2DHG) heterostructure FET (HFET) which operates in MIS transistor-like mode has been fabricated on an undoped AlGaAs/GaAs heterostructure grown by molecular beam epitaxy (MBE). The device operates entirely in an enhancement-mode with a threshold voltage of minus 0. 3 V at both 300 K and 77 K. Maximum values of transconductances of 17 ms/mm at 300 K and 40 mS/mm at 77 K have been achieved in a 1 mu m gate length structure. As the present p-channel device is very simple, a complementary circuit scheme using a p-channel 2DHG HFET of this type will be most promising in future.

Original language	English
Title of host publication	Japanese Journal of Applied Physics, Part 2: Letters
Pages	335-337
Number of pages	3
Volume	24
Edition	5
Publication status	Published - 1985 May
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

Access to Document

Fingerprint Dive into the research topics of 'NEW p-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET EMPLOYING TWO DIMENSIONAL HOLE GAS.'. Together they form a unique fingerprint.

Cite this

@inbook{3da914d42c1940deb8e1003dc9908786,

title = "NEW p-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET EMPLOYING TWO DIMENSIONAL HOLE GAS.",

abstract = "A new p-channel two dimensional hole gas (2DHG) heterostructure FET (HFET) which operates in MIS transistor-like mode has been fabricated on an undoped AlGaAs/GaAs heterostructure grown by molecular beam epitaxy (MBE). The device operates entirely in an enhancement-mode with a threshold voltage of minus 0. 3 V at both 300 K and 77 K. Maximum values of transconductances of 17 ms/mm at 300 K and 40 mS/mm at 77 K have been achieved in a 1 mu m gate length structure. As the present p-channel device is very simple, a complementary circuit scheme using a p-channel 2DHG HFET of this type will be most promising in future.",

author = "Kunishige Oe and Makoto Hirano and Kunihiro Arai and Fumihiko Yanagawa",

year = "1985",

month = may,

language = "English",

volume = "24",

pages = "335--337",

booktitle = "Japanese Journal of Applied Physics, Part 2: Letters",

edition = "5",

}

TY - CHAP

T1 - NEW p-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET EMPLOYING TWO DIMENSIONAL HOLE GAS.

AU - Oe, Kunishige

AU - Hirano, Makoto

AU - Arai, Kunihiro

AU - Yanagawa, Fumihiko

PY - 1985/5

Y1 - 1985/5

N2 - A new p-channel two dimensional hole gas (2DHG) heterostructure FET (HFET) which operates in MIS transistor-like mode has been fabricated on an undoped AlGaAs/GaAs heterostructure grown by molecular beam epitaxy (MBE). The device operates entirely in an enhancement-mode with a threshold voltage of minus 0. 3 V at both 300 K and 77 K. Maximum values of transconductances of 17 ms/mm at 300 K and 40 mS/mm at 77 K have been achieved in a 1 mu m gate length structure. As the present p-channel device is very simple, a complementary circuit scheme using a p-channel 2DHG HFET of this type will be most promising in future.

AB - A new p-channel two dimensional hole gas (2DHG) heterostructure FET (HFET) which operates in MIS transistor-like mode has been fabricated on an undoped AlGaAs/GaAs heterostructure grown by molecular beam epitaxy (MBE). The device operates entirely in an enhancement-mode with a threshold voltage of minus 0. 3 V at both 300 K and 77 K. Maximum values of transconductances of 17 ms/mm at 300 K and 40 mS/mm at 77 K have been achieved in a 1 mu m gate length structure. As the present p-channel device is very simple, a complementary circuit scheme using a p-channel 2DHG HFET of this type will be most promising in future.

UR - http://www.scopus.com/inward/record.url?scp=0022068908&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022068908&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0022068908

VL - 24

SP - 335

EP - 337

BT - Japanese Journal of Applied Physics, Part 2: Letters

ER -