Abstract
Multilevel interconnection technology has become essential for the development of high density and high integration of LSIs in recent years. Planarization of interlayer dielectrics is very important for highly reliable, fine multilevel interconnections. In this article, we will discuss the development process and the features of a new polyimide siloxane film in contrast with problems of conventional polyimide film, and will outline the practical application.
| Original language | English |
|---|---|
| Pages (from-to) | 74-79 |
| Number of pages | 6 |
| Journal | JEE. Journal of electronic engineering |
| Volume | 25 |
| Issue number | 263 |
| Publication status | Published - 1988 Nov |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
New polyimide film paves way for super high-speed logic devices. / Homma, Tetsuya; Numasawa, Youichiro; Murao, Yukinobu; Hamano, Kuniyuki.
In: JEE. Journal of electronic engineering, Vol. 25, No. 263, 11.1988, p. 74-79.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - New polyimide film paves way for super high-speed logic devices
AU - Homma, Tetsuya
AU - Numasawa, Youichiro
AU - Murao, Yukinobu
AU - Hamano, Kuniyuki
PY - 1988/11
Y1 - 1988/11
N2 - Multilevel interconnection technology has become essential for the development of high density and high integration of LSIs in recent years. Planarization of interlayer dielectrics is very important for highly reliable, fine multilevel interconnections. In this article, we will discuss the development process and the features of a new polyimide siloxane film in contrast with problems of conventional polyimide film, and will outline the practical application.
AB - Multilevel interconnection technology has become essential for the development of high density and high integration of LSIs in recent years. Planarization of interlayer dielectrics is very important for highly reliable, fine multilevel interconnections. In this article, we will discuss the development process and the features of a new polyimide siloxane film in contrast with problems of conventional polyimide film, and will outline the practical application.
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UR - http://www.scopus.com/inward/citedby.url?scp=0024106171&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0024106171
VL - 25
SP - 74
EP - 79
JO - JEE, Journal of Electronic Engineering
JF - JEE, Journal of Electronic Engineering
SN - 0385-4507
IS - 263
ER -